ON-resistance modulation of high voltage GaN HEMT on sapphire substrate under high applied voltage

Wataru Saito; Tomohiro Nitta; Yorito Kakiuchi; Yasunobu Saito; Kunio Tsuda; Ichiro Omura; Masakazu Yamaguchi

doi:10.1109/LED.2007.901665

ON-resistance modulation of high voltage GaN HEMT on sapphire substrate under high applied voltage

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura, Masakazu Yamaguchi

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

The 620-V/1.4-A GaN high-electron mobility transistors on sapphire substrate were fabricated and the ON-resistance modulations caused by current collapse phenomena were measured under high applied voltage. Since the fabricated devices had insulating substrates, no field-plate (FP) effect was expected and the ON-resistance increases of these devices were larger than those on an n-SiC substrate even with the same source-FP structure. The dual-FP structure, which was a combination of gate FP and source FP, was effective in suppressing the ON-resistance increase due to minimization of the gate-edge electric field concentration. The ON-resistance after the applied voltage of 250 V decreased by twice that at low drain voltage by the dual-FP structure.

Original language	English
Pages (from-to)	676-678
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	8
DOIs	https://doi.org/10.1109/LED.2007.901665
Publication status	Published - Aug 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.901665

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title = "ON-resistance modulation of high voltage GaN HEMT on sapphire substrate under high applied voltage",

abstract = "The 620-V/1.4-A GaN high-electron mobility transistors on sapphire substrate were fabricated and the ON-resistance modulations caused by current collapse phenomena were measured under high applied voltage. Since the fabricated devices had insulating substrates, no field-plate (FP) effect was expected and the ON-resistance increases of these devices were larger than those on an n-SiC substrate even with the same source-FP structure. The dual-FP structure, which was a combination of gate FP and source FP, was effective in suppressing the ON-resistance increase due to minimization of the gate-edge electric field concentration. The ON-resistance after the applied voltage of 250 V decreased by twice that at low drain voltage by the dual-FP structure.",

author = "Wataru Saito and Tomohiro Nitta and Yorito Kakiuchi and Yasunobu Saito and Kunio Tsuda and Ichiro Omura and Masakazu Yamaguchi",

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language = "English",

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pages = "676--678",

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T1 - ON-resistance modulation of high voltage GaN HEMT on sapphire substrate under high applied voltage

AU - Saito, Wataru

AU - Nitta, Tomohiro

AU - Kakiuchi, Yorito

AU - Saito, Yasunobu

AU - Tsuda, Kunio

AU - Omura, Ichiro

AU - Yamaguchi, Masakazu

PY - 2007/8

Y1 - 2007/8

N2 - The 620-V/1.4-A GaN high-electron mobility transistors on sapphire substrate were fabricated and the ON-resistance modulations caused by current collapse phenomena were measured under high applied voltage. Since the fabricated devices had insulating substrates, no field-plate (FP) effect was expected and the ON-resistance increases of these devices were larger than those on an n-SiC substrate even with the same source-FP structure. The dual-FP structure, which was a combination of gate FP and source FP, was effective in suppressing the ON-resistance increase due to minimization of the gate-edge electric field concentration. The ON-resistance after the applied voltage of 250 V decreased by twice that at low drain voltage by the dual-FP structure.

AB - The 620-V/1.4-A GaN high-electron mobility transistors on sapphire substrate were fabricated and the ON-resistance modulations caused by current collapse phenomena were measured under high applied voltage. Since the fabricated devices had insulating substrates, no field-plate (FP) effect was expected and the ON-resistance increases of these devices were larger than those on an n-SiC substrate even with the same source-FP structure. The dual-FP structure, which was a combination of gate FP and source FP, was effective in suppressing the ON-resistance increase due to minimization of the gate-edge electric field concentration. The ON-resistance after the applied voltage of 250 V decreased by twice that at low drain voltage by the dual-FP structure.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ON-resistance modulation of high voltage GaN HEMT on sapphire substrate under high applied voltage

Abstract

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