ON-resistance modulation of high voltage GaN HEMT on sapphire substrate under high applied voltage

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura, Masakazu Yamaguchi

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58 Citations (Scopus)


The 620-V/1.4-A GaN high-electron mobility transistors on sapphire substrate were fabricated and the ON-resistance modulations caused by current collapse phenomena were measured under high applied voltage. Since the fabricated devices had insulating substrates, no field-plate (FP) effect was expected and the ON-resistance increases of these devices were larger than those on an n-SiC substrate even with the same source-FP structure. The dual-FP structure, which was a combination of gate FP and source FP, was effective in suppressing the ON-resistance increase due to minimization of the gate-edge electric field concentration. The ON-resistance after the applied voltage of 250 V decreased by twice that at low drain voltage by the dual-FP structure.

Original languageEnglish
Pages (from-to)676-678
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
Publication statusPublished - Aug 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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