TY - JOUR
T1 - On-Line Multi-Frequency Electrical Resistance Tomography (mfERT) Device for Crystalline Phase Imaging in High-Temperature Molten Oxide
AU - Sejati, Prima Asmara
AU - Saito, Noritaka
AU - Prayitno, Yosephus Ardean Kurnianto
AU - Tanaka, Koji
AU - Darma, Panji Nursetia
AU - Arisato, Miku
AU - Nakashima, Kunihiko
AU - Takei, Masahiro
N1 - Funding Information:
This study is supported by an academic collaboration research project between Chiba University, Japan, and Kyushu University, Japan. The authors would like to thank Yoshiyuki Egashira (Kyushu University) and Kota Kimura (Chiba University) for their assistance in the exper-iments.
Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2022/2/1
Y1 - 2022/2/1
N2 - An on-line multi-frequency electrical resistance tomography (mfERT) device with a melt-resistive sensor and noise reduction hardware has been proposed for crystalline phase imaging in high-temperature molten oxide. The melt-resistive sensor consists of eight electrodes made of plat-inum-rhodium (Pt-20mass%Rh) alloy covered by non-conductive aluminum oxide (Al2O3) to pre-vent an electrical short. The noise reduction hardware has been designed by two approaches: (1) total harmonic distortion (THD) for the robust multiplexer, and (2) a current injection frequency pair: low fL and high fH, for thermal noise compensation. THD is determined by a percentage evaluation of k-th harmonic distortions of ZnO at f = 0.1~10,000 Hz. The fL and fH are determined by the thermal noise behavior estimation at different temperatures. At f < 100 Hz, the THD percentage is relatively high and fluctuates; otherwise, THD dramatically declines, nearly reaching zero. At the determined fL ≥ 10,000 Hz and fH ≈ 1,000,000 Hz, thermal noise is significantly compen-sated. The on-line mfERT was tested in the experiments of a non-conductive Al2O3 rod dipped into conductive molten zinc-borate (60ZnO-40B2O3) at 1000~1200 °C. As a result, the on-line mfERT is able to reconstruct the Al2O3 rod inclusion images in the high-temperature fields with low error, ςf L, T = 5.99%, at 1000 °C, and an average error 〈ςf L⟩ = 9.2%.
AB - An on-line multi-frequency electrical resistance tomography (mfERT) device with a melt-resistive sensor and noise reduction hardware has been proposed for crystalline phase imaging in high-temperature molten oxide. The melt-resistive sensor consists of eight electrodes made of plat-inum-rhodium (Pt-20mass%Rh) alloy covered by non-conductive aluminum oxide (Al2O3) to pre-vent an electrical short. The noise reduction hardware has been designed by two approaches: (1) total harmonic distortion (THD) for the robust multiplexer, and (2) a current injection frequency pair: low fL and high fH, for thermal noise compensation. THD is determined by a percentage evaluation of k-th harmonic distortions of ZnO at f = 0.1~10,000 Hz. The fL and fH are determined by the thermal noise behavior estimation at different temperatures. At f < 100 Hz, the THD percentage is relatively high and fluctuates; otherwise, THD dramatically declines, nearly reaching zero. At the determined fL ≥ 10,000 Hz and fH ≈ 1,000,000 Hz, thermal noise is significantly compen-sated. The on-line mfERT was tested in the experiments of a non-conductive Al2O3 rod dipped into conductive molten zinc-borate (60ZnO-40B2O3) at 1000~1200 °C. As a result, the on-line mfERT is able to reconstruct the Al2O3 rod inclusion images in the high-temperature fields with low error, ςf L, T = 5.99%, at 1000 °C, and an average error 〈ςf L⟩ = 9.2%.
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U2 - 10.3390/s22031025
DO - 10.3390/s22031025
M3 - Article
C2 - 35161771
AN - SCOPUS:85123455082
SN - 1424-8220
VL - 22
JO - Sensors
JF - Sensors
IS - 3
M1 - 1025
ER -