Ohmic contact formation on n-type Ge by direct deposition of TiN

Masatoshi Iyota, Keisuke Yamamoto, Dong Wang, Haigui Yang, Hiroshi Nakashima

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48 Citations (Scopus)


We succeeded in Ohmic contact formation on an n-Ge substrate by direct sputter deposition from a TiN target and subsequent postmetallization annealing (PMA) at 350°C. The Schottky barrier heights of the TiN/n-Ge and TiN/p-Ge contacts were 0.18 eV and 0.50 eV, respectively, and were maintained up to a PMA temperature of 550 °C. These electrical characteristics are likely to be associated with an approximately 1-nm-thick interlayer formed at a TiN/Ge interface, which leads to the alleviation of the Fermi level pinning. We demonstrated the validity of the TiN/n-Ge contact using an n+ /p junction, which showed an excellent ideal factor of n=1.01.

Original languageEnglish
Article number192108
JournalApplied Physics Letters
Issue number19
Publication statusPublished - May 9 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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