Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

Yutaka Noguchi; Rieko Ueda; Tohru Kubota; Toshiya Kamikado; Shiyoshi Yokoyama; Takashi Nagase

doi:10.1016/j.tsf.2007.04.111

Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

Yutaka Noguchi, Rieko Ueda, Tohru Kubota, Toshiya Kamikado, Shiyoshi Yokoyama, Takashi Nagase

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H₂BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.

Original language	English
Pages (from-to)	2762-2766
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	9
DOIs	https://doi.org/10.1016/j.tsf.2007.04.111
Publication status	Published - Mar 3 2008
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.04.111

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title = "Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions",

abstract = "We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H2BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.",

author = "Yutaka Noguchi and Rieko Ueda and Tohru Kubota and Toshiya Kamikado and Shiyoshi Yokoyama and Takashi Nagase",

note = "Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology and by the Hyogo Science and Technology Association.",

year = "2008",

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doi = "10.1016/j.tsf.2007.04.111",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

AU - Noguchi, Yutaka

AU - Ueda, Rieko

AU - Kubota, Tohru

AU - Kamikado, Toshiya

AU - Yokoyama, Shiyoshi

AU - Nagase, Takashi

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology and by the Hyogo Science and Technology Association.

PY - 2008/3/3

Y1 - 2008/3/3

N2 - We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H2BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.

AB - We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H2BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.

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DO - 10.1016/j.tsf.2007.04.111

M3 - Article

AN - SCOPUS:39449128281

SN - 0040-6090

VL - 516

SP - 2762

EP - 2766

JO - Thin Solid Films

JF - Thin Solid Films

IS - 9

ER -

Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

Abstract

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