Observation of low-temperature elastic softening due to vacancy in crystalline silicon

Terutaka Goto, Hiroshi Yamada-Kaneta, Yasuhiro Saito, Yuichi Nemoto, Koji Sato, Koichi Kakimoto, Shintaro Nakamura

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46 Citations (Scopus)


In challenging a direct observation of the vacancy in crystalline silicon, we have carried out low-temperature ultrasonic measurements down to 20 mK. The longitudinal elastic constants of non-doped and B-doped crystalline silicons, which were grown by a floating zone (FZ) method in commercial base, reveal the elastic softening proportional to the reciprocal temperature below 20 K. The applied magnetic fields turn the elastic softening of the B-doped FZ silicon to a temperature-independent behavior, while the fields up to 16 T do not affect the elastic softening of the non-doped FZ silicon. We present a plausible scenario for this result. Namely the vacancy with the non-magnetic charge state V 0 in the non-doped silicon and the magnetic V + in the B-doped silicon is responsible for the low-temperature softening of the shear elastic constants (C 11 - C 12)/2 and C 44, which can be described in terms of the quadrupole susceptibility due to the Jahn-Teller effect.

Original languageEnglish
Article number044602
Journaljournal of the physical society of japan
Issue number4
Publication statusPublished - Apr 2006

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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