Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation

Masakazu Hattori; Hiroshi Ikenoue; Daisuke Nakamura; Tatsuo Okada

doi:10.1117/12.2211865

Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation

Masakazu Hattori, Hiroshi Ikenoue, Daisuke Nakamura, Tatsuo Okada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Observation of graphene growing process on SiC(0001) step and terrace structure formed by direct laser patterning is proposed. We have proposed a novel method of direct growth of patterned graphene on SiC(0001) surfaces using KrF excimer-laser irradiation. KrF excimer-laser with a wavelength of 248 nm and a duration of 55 ns was used to graphene forming in this study. Laser irradiation was achieved with various laser fluenece. Grain size and number of layers of the graphene was varied by laser irradiation condition. Through conductive atomic force microscopy, it was observed that graphene grain expanded from (112-n) faced step area to (0001) faced terrace area in initial graphene growth process. From the result of the Raman spectroscopy, transmission electron microscopy and Conductive AFM, we summarized graphene growth process on SiC(0001) surfaces.

Original language	English
Title of host publication	Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI
Editors	Beat Neuenschwander, Stephan Roth, Costas P. Grigoropoulos, Tetsuya Makimura
Publisher	SPIE
ISBN (Electronic)	9781628419702
DOIs	https://doi.org/10.1117/12.2211865
Publication status	Published - 2016
Event	Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI - San Francisco, United States Duration: Feb 15 2016 → Feb 18 2016

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9735
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI
Country/Territory	United States
City	San Francisco
Period	2/15/16 → 2/18/16

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2211865

Cite this

Hattori, M., Ikenoue, H., Nakamura, D., & Okada, T. (2016). Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation. In B. Neuenschwander, S. Roth, C. P. Grigoropoulos, & T. Makimura (Eds.), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI Article 97350Y (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9735). SPIE. https://doi.org/10.1117/12.2211865

Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation. / Hattori, Masakazu; Ikenoue, Hiroshi; Nakamura, Daisuke et al.
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI. ed. / Beat Neuenschwander; Stephan Roth; Costas P. Grigoropoulos; Tetsuya Makimura. SPIE, 2016. 97350Y (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9735).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hattori, M, Ikenoue, H, Nakamura, D & Okada, T 2016, Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation. in B Neuenschwander, S Roth, CP Grigoropoulos & T Makimura (eds), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI., 97350Y, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9735, SPIE, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI, San Francisco, United States, 2/15/16. https://doi.org/10.1117/12.2211865

Hattori M, Ikenoue H, Nakamura D, Okada T. Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation. In Neuenschwander B, Roth S, Grigoropoulos CP, Makimura T, editors, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI. SPIE. 2016. 97350Y. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2211865

Hattori, Masakazu ; Ikenoue, Hiroshi ; Nakamura, Daisuke et al. / Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation. Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI. editor / Beat Neuenschwander ; Stephan Roth ; Costas P. Grigoropoulos ; Tetsuya Makimura. SPIE, 2016. (Proceedings of SPIE - The International Society for Optical Engineering).

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abstract = "Observation of graphene growing process on SiC(0001) step and terrace structure formed by direct laser patterning is proposed. We have proposed a novel method of direct growth of patterned graphene on SiC(0001) surfaces using KrF excimer-laser irradiation. KrF excimer-laser with a wavelength of 248 nm and a duration of 55 ns was used to graphene forming in this study. Laser irradiation was achieved with various laser fluenece. Grain size and number of layers of the graphene was varied by laser irradiation condition. Through conductive atomic force microscopy, it was observed that graphene grain expanded from (112-n) faced step area to (0001) faced terrace area in initial graphene growth process. From the result of the Raman spectroscopy, transmission electron microscopy and Conductive AFM, we summarized graphene growth process on SiC(0001) surfaces.",

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Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation

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