Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor

Shin ichi Nishizawa; Michel Pons

doi:10.1016/j.jcrysgro.2006.12.018

Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor

Shin ichi Nishizawa, Michel Pons

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Numerical simulation was carried out on SiC-CVD in a horizontal hot-wall reactor. The growth and doping features of both Si- and C-terminated surfaces were analyzed by changing the inlet source gas conditions. The role of conditions at the growing surface on the growth feature was investigated. It was identified that the conditions at the growing surface are good parameters to explain the growth feature.

Original language	English
Pages (from-to)	334-336
Number of pages	3
Journal	Journal of Crystal Growth
Volume	303
Issue number	1 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.12.018
Publication status	Published - May 1 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.12.018

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title = "Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor",

abstract = "Numerical simulation was carried out on SiC-CVD in a horizontal hot-wall reactor. The growth and doping features of both Si- and C-terminated surfaces were analyzed by changing the inlet source gas conditions. The role of conditions at the growing surface on the growth feature was investigated. It was identified that the conditions at the growing surface are good parameters to explain the growth feature.",

author = "Nishizawa, {Shin ichi} and Michel Pons",

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AU - Nishizawa, Shin ichi

AU - Pons, Michel

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N2 - Numerical simulation was carried out on SiC-CVD in a horizontal hot-wall reactor. The growth and doping features of both Si- and C-terminated surfaces were analyzed by changing the inlet source gas conditions. The role of conditions at the growing surface on the growth feature was investigated. It was identified that the conditions at the growing surface are good parameters to explain the growth feature.

AB - Numerical simulation was carried out on SiC-CVD in a horizontal hot-wall reactor. The growth and doping features of both Si- and C-terminated surfaces were analyzed by changing the inlet source gas conditions. The role of conditions at the growing surface on the growth feature was investigated. It was identified that the conditions at the growing surface are good parameters to explain the growth feature.

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DO - 10.1016/j.jcrysgro.2006.12.018

M3 - Article

AN - SCOPUS:34147142516

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SP - 334

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1 SPEC. ISS.

ER -

Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor

Abstract

All Science Journal Classification (ASJC) codes

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