TY - JOUR
T1 - Numerical calculation with empirical interatomic potential for formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP
AU - Kangawa, Y.
AU - Kuwano, N.
AU - Oki, K.
AU - Ito, T.
N1 - Funding Information:
This work was partly supported by JSPS Research for the Future Program in Area of Atomic Scale Surface and Interface Dynamics under the project of “The First Principle Quantum Theoretical Approach and Microscopic Simulations” and Grant-in-Aid for Scientific Research (No. 09242106) from the Ministry of Education, Science, Sports and Culture.
PY - 2000/6
Y1 - 2000/6
N2 - In an InGaAs/(110)InP, a CuAu-I type ordered structure during is formed growth with a propagation of two-monolayer steps (2-MLSs). The numerical calculation with an empirical interatomic potential has suggested that the ordered InGaAs clusters are stabilized at kink edges of the 2-MLSs. We confirmed that In and Ga adatoms preferentially occupy the upper and lower sites at a kink of 2-MLS, respectively. This explains that the CuAu-I type ordered structure which is made of alternately stacked In- and Ga-rich (110) planes is formed by propagation of the 2-MLS with kinks. Our Monte Carlo simulation using the ordering model showed that the ordered structure is actually formed at the growth temperature (approximately 700 K).
AB - In an InGaAs/(110)InP, a CuAu-I type ordered structure during is formed growth with a propagation of two-monolayer steps (2-MLSs). The numerical calculation with an empirical interatomic potential has suggested that the ordered InGaAs clusters are stabilized at kink edges of the 2-MLSs. We confirmed that In and Ga adatoms preferentially occupy the upper and lower sites at a kink of 2-MLS, respectively. This explains that the CuAu-I type ordered structure which is made of alternately stacked In- and Ga-rich (110) planes is formed by propagation of the 2-MLS with kinks. Our Monte Carlo simulation using the ordering model showed that the ordered structure is actually formed at the growth temperature (approximately 700 K).
UR - https://www.scopus.com/pages/publications/0034205009
UR - https://www.scopus.com/inward/citedby.url?scp=0034205009&partnerID=8YFLogxK
U2 - 10.1016/S0169-4332(00)00109-4
DO - 10.1016/S0169-4332(00)00109-4
M3 - Conference article
AN - SCOPUS:0034205009
SN - 0169-4332
VL - 159
SP - 368
EP - 373
JO - Applied Surface Science
JF - Applied Surface Science
T2 - 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3)
Y2 - 25 October 1999 through 29 October 1999
ER -