TY - GEN
T1 - Numerical analysis of Mc-Si crystal growth
AU - Kakimoto, Koichi
AU - Matsuo, Hitoshi
AU - Hisamatsu, Syo
AU - Ganesh, Birava
AU - Bing, Gao
AU - Chen, X. J.
AU - Liu, Lijun
AU - Miyazawa, Hiroaki
AU - Kangawa, Yoshihiro
PY - 2009
Y1 - 2009
N2 - The content and uniformity of impurities and precipitates have an important role in the efficiency of solar cells made of multicrystalline silicon. We developed a transient global model of heat and mass transfer for directional solidification for multicrystalline silicon and a dynamic model of SiC particles and silicon nitride precipitation in molten silicon based phase diagrams. Computations were carried out to clarify the distributions of carbon, nitrogen and oxygen based on segregation and the particle formation in molten silicon during a directional solidification process. It was shown that the content of SiC precipitated in solidified ingots increases as a function of the fraction solidified. It was also clarified from the results that Si2N 2O was first formed near the melt-crystal interface, since oxygen concentration in the melt decreases and nitrogen concentration in the melt increases with solidification of the molten silicon. Si3N4 was formed after Si2N2O had been formed.
AB - The content and uniformity of impurities and precipitates have an important role in the efficiency of solar cells made of multicrystalline silicon. We developed a transient global model of heat and mass transfer for directional solidification for multicrystalline silicon and a dynamic model of SiC particles and silicon nitride precipitation in molten silicon based phase diagrams. Computations were carried out to clarify the distributions of carbon, nitrogen and oxygen based on segregation and the particle formation in molten silicon during a directional solidification process. It was shown that the content of SiC precipitated in solidified ingots increases as a function of the fraction solidified. It was also clarified from the results that Si2N 2O was first formed near the melt-crystal interface, since oxygen concentration in the melt decreases and nitrogen concentration in the melt increases with solidification of the molten silicon. Si3N4 was formed after Si2N2O had been formed.
UR - http://www.scopus.com/inward/record.url?scp=75849153178&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=75849153178&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.156-158.193
DO - 10.4028/www.scientific.net/SSP.156-158.193
M3 - Conference contribution
AN - SCOPUS:75849153178
SN - 3908451744
SN - 9783908451747
T3 - Solid State Phenomena
SP - 193
EP - 198
BT - Gettering and Defect Engineering in Semiconductor Technology XIII
PB - Trans Tech Publications Ltd
T2 - 13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009
Y2 - 26 September 2009 through 2 October 2009
ER -