Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor

Shin Ichi Nishizawa; Michel Pons

doi:10.4028/0-87849-963-6.53

Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor

Shin Ichi Nishizawa, Michel Pons

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

Growth, etching, and doping features of SiC-CVD in a horizontal hot-wall reactor were numerically analyzed using the improved heterogeneous model. The improved model was able to explain the growth and etching features accurately. In addition, we propose the surface flux, surface carbon and silicon concentration, and its ratio as the universal parameter of the SiC-CVD process. Concerning doping features, the improved model showed that nitrogen and aluminum doping incorporation could be explained by the site competition model, while taking into account the amount of surface silicon and surface carbon, respectively.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
Publisher	Trans Tech Publications Ltd
Pages	53-56
Number of pages	4
ISBN (Print)	0878499636, 9780878499632
DOIs	https://doi.org/10.4028/0-87849-963-6.53
Publication status	Published - 2005
Externally published	Yes
Event	5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy Duration: Aug 31 2004 → Sept 4 2004

Publication series

Name	Materials Science Forum
Volume	483-485
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
Country/Territory	Italy
City	Bologna
Period	8/31/04 → 9/4/04

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.4028/0-87849-963-6.53

Cite this

Nishizawa, S. I., & Pons, M. (2005). Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor. In Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials (pp. 53-56). (Materials Science Forum; Vol. 483-485). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-963-6.53

Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor. / Nishizawa, Shin Ichi; Pons, Michel.
Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. Trans Tech Publications Ltd, 2005. p. 53-56 (Materials Science Forum; Vol. 483-485).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nishizawa, SI & Pons, M 2005, Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor. in Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. Materials Science Forum, vol. 483-485, Trans Tech Publications Ltd, pp. 53-56, 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004, Bologna, Italy, 8/31/04. https://doi.org/10.4028/0-87849-963-6.53

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AB - Growth, etching, and doping features of SiC-CVD in a horizontal hot-wall reactor were numerically analyzed using the improved heterogeneous model. The improved model was able to explain the growth and etching features accurately. In addition, we propose the surface flux, surface carbon and silicon concentration, and its ratio as the universal parameter of the SiC-CVD process. Concerning doping features, the improved model showed that nitrogen and aluminum doping incorporation could be explained by the site competition model, while taking into account the amount of surface silicon and surface carbon, respectively.

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Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor

Abstract

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