Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation

Yanping Xiao; Teruaki Motooka; Ryo Teranishi; Shinji Munetoh

doi:10.1016/j.jcrysgro.2011.11.018

Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation

Yanping Xiao, Teruaki Motooka, Ryo Teranishi, Shinji Munetoh

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The recrystallization processes of supercooled Si and Ge melts were investigated using molecular-dynamics (MD) simulations. The incubation time T_i defined as the cooling time period to obtain 10% recrystallization of supercooled melts is found to be minimum when temperature is around 0.7T_m (T_m: melting temperature for both of crystal Si and Ge). The MD results suggest that 0.7T_m is an optimum annealing temperature to enhance the nucleation rate in the growth processes of Si and Ge films.

Original language	English
Pages (from-to)	103-105
Number of pages	3
Journal	Journal of Crystal Growth
Volume	362
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.11.018
Publication status	Published - Jan 1 2013

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2011.11.018

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AU - Motooka, Teruaki

AU - Teranishi, Ryo

AU - Munetoh, Shinji

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AB - The recrystallization processes of supercooled Si and Ge melts were investigated using molecular-dynamics (MD) simulations. The incubation time Ti defined as the cooling time period to obtain 10% recrystallization of supercooled melts is found to be minimum when temperature is around 0.7Tm (Tm: melting temperature for both of crystal Si and Ge). The MD results suggest that 0.7Tm is an optimum annealing temperature to enhance the nucleation rate in the growth processes of Si and Ge films.

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Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation

Abstract

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