Nucleation control in solid-phase crystallization of a-Si/SiO2 by local Ge insertion

Isao Tsunoda, Kei Nagatomo, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao

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14 Citations (Scopus)


The effects of local Ge insertion on the solid-phase crystallization (SPC) of a-Si films have been investigated. Three types of stacked structures, i.e., (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2, and (c) SiO2/a-Ge/a-Si/SiO2, were annealed at 600°C. For structure (a) with thin (∼5 nm) Ge films, Ge atoms completely diffused into both sides of a-Si regions, and SPC was not enhanced. However, when Ge thickness was increased to more than 10nm, Ge atoms were localized. Such localization became significant for structures (b) and (c) even for samples with thin Ge films. In addition, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in Ge layers, and then propagated into a-Si layers. Therefore, interface-nucleation-driven SPC becomes possible using structures (b) and (c). This will be a useful tool in achieving oriented Si growth on SiO2.

Original languageEnglish
Pages (from-to)1901-1904
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - Apr 2004

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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