TY - JOUR
T1 - Nucleation control in solid-phase crystallization of a-Si/SiO2 by local Ge insertion
AU - Tsunoda, Isao
AU - Nagatomo, Kei
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Yamaguchi, Shinya
AU - Miyao, Masanobu
PY - 2004/4
Y1 - 2004/4
N2 - The effects of local Ge insertion on the solid-phase crystallization (SPC) of a-Si films have been investigated. Three types of stacked structures, i.e., (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2, and (c) SiO2/a-Ge/a-Si/SiO2, were annealed at 600°C. For structure (a) with thin (∼5 nm) Ge films, Ge atoms completely diffused into both sides of a-Si regions, and SPC was not enhanced. However, when Ge thickness was increased to more than 10nm, Ge atoms were localized. Such localization became significant for structures (b) and (c) even for samples with thin Ge films. In addition, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in Ge layers, and then propagated into a-Si layers. Therefore, interface-nucleation-driven SPC becomes possible using structures (b) and (c). This will be a useful tool in achieving oriented Si growth on SiO2.
AB - The effects of local Ge insertion on the solid-phase crystallization (SPC) of a-Si films have been investigated. Three types of stacked structures, i.e., (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2, and (c) SiO2/a-Ge/a-Si/SiO2, were annealed at 600°C. For structure (a) with thin (∼5 nm) Ge films, Ge atoms completely diffused into both sides of a-Si regions, and SPC was not enhanced. However, when Ge thickness was increased to more than 10nm, Ge atoms were localized. Such localization became significant for structures (b) and (c) even for samples with thin Ge films. In addition, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in Ge layers, and then propagated into a-Si layers. Therefore, interface-nucleation-driven SPC becomes possible using structures (b) and (c). This will be a useful tool in achieving oriented Si growth on SiO2.
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U2 - 10.1143/JJAP.43.1901
DO - 10.1143/JJAP.43.1901
M3 - Article
AN - SCOPUS:3142611364
SN - 0021-4922
VL - 43
SP - 1901
EP - 1904
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 B
ER -