Nucleation Control in Solid-Phase Crystallization of a-Si/SiO_2 by Local Ge Insertion

Isao Tsunoda, Kei Nagatomo, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao

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The effects of local Ge insertion on the solid-phase crystallization (SPC) of a-Si films have been investigated. Three types of stacked structures, i.e., (a) a-Si/a-Ge/a-Si/SiO<SUB>2</SUB>, (b) a-Si/a-Ge/SiO<SUB>2</SUB>, and (c) SiO<SUB>2</SUB>/a-Ge/a-Si/SiO<SUB>2</SUB>, were annealed at 600°C. For structure (a) with thin (∼5 nm) Ge films, Ge atoms completely diffused into both sides of a-Si regions, and SPC was not enhanced. However, when Ge thickness was increased to more than 10 nm, Ge atoms were localized. Such localization became significant for structures (b) and (c) even for samples with thin Ge films. In addition, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in Ge layers, and then propagated into a-Si layers. Therefore, interface-nucleation-driven SPC becomes possible using structures (b) and (c). This will be a useful tool in achieving oriented Si growth on SiO<SUB>2</SUB>.
Original languageEnglish
Pages (from-to)1901-1904
Number of pages4
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number4
Publication statusPublished - Apr 30 2004


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