Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces

Satoshi Yamada; Jun Ichi Kato; Satoru Tanaka; Ikuo Suemune; Adrian Avramescu; Yoshinobu Aoyagi; Nobuaki Teraguchi; Akira Suzuki

doi:10.1063/1.1377309

Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces

Satoshi Yamada, Jun Ichi Kato, Satoru Tanaka, Ikuo Suemune, Adrian Avramescu, Yoshinobu Aoyagi, Nobuaki Teraguchi, Akira Suzuki

Research output: Contribution to journal › Article › peer-review

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Abstract

Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC (0001) surfaces, which were obtained by HCl etching at elevated temperatures prior to growth, were investigated. The surface morphology and the defect density of AlN films on such surfaces were significantly improved compared to those on as-received SiC surfaces. This is due to enhanced diffusion length and reduced incoherent boundaries at the coalescence regions of the AlN islands. AlN nuclei on the as-received SiC surface were crystallographically misaligned and thus induced incoherent boundaries at the coalescence stage, resulting in the delay of the two-dimensional growth mode transition and defect formation in AlN films.

Original language	English
Pages (from-to)	3612-3614
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	23
DOIs	https://doi.org/10.1063/1.1377309
Publication status	Published - Jun 4 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1377309

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title = "Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces",

abstract = "Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC (0001) surfaces, which were obtained by HCl etching at elevated temperatures prior to growth, were investigated. The surface morphology and the defect density of AlN films on such surfaces were significantly improved compared to those on as-received SiC surfaces. This is due to enhanced diffusion length and reduced incoherent boundaries at the coalescence regions of the AlN islands. AlN nuclei on the as-received SiC surface were crystallographically misaligned and thus induced incoherent boundaries at the coalescence stage, resulting in the delay of the two-dimensional growth mode transition and defect formation in AlN films.",

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T1 - Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces

AU - Yamada, Satoshi

AU - Kato, Jun Ichi

AU - Tanaka, Satoru

AU - Suemune, Ikuo

AU - Avramescu, Adrian

AU - Aoyagi, Yoshinobu

AU - Teraguchi, Nobuaki

AU - Suzuki, Akira

PY - 2001/6/4

Y1 - 2001/6/4

N2 - Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC (0001) surfaces, which were obtained by HCl etching at elevated temperatures prior to growth, were investigated. The surface morphology and the defect density of AlN films on such surfaces were significantly improved compared to those on as-received SiC surfaces. This is due to enhanced diffusion length and reduced incoherent boundaries at the coalescence regions of the AlN islands. AlN nuclei on the as-received SiC surface were crystallographically misaligned and thus induced incoherent boundaries at the coalescence stage, resulting in the delay of the two-dimensional growth mode transition and defect formation in AlN films.

AB - Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC (0001) surfaces, which were obtained by HCl etching at elevated temperatures prior to growth, were investigated. The surface morphology and the defect density of AlN films on such surfaces were significantly improved compared to those on as-received SiC surfaces. This is due to enhanced diffusion length and reduced incoherent boundaries at the coalescence regions of the AlN islands. AlN nuclei on the as-received SiC surface were crystallographically misaligned and thus induced incoherent boundaries at the coalescence stage, resulting in the delay of the two-dimensional growth mode transition and defect formation in AlN films.

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Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces

Abstract

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