In this work, we developed a solution growth method that uses Li-Al-N solution to epitaxially grow AlN on a self-nucleated, columnar AlN seed crystal. The seed crystal was grown by physical vapor transport, and the solution was obtained by annealing a Li3N-Al mixture. The epitaxial AlN grew ∼5 μm in 10 h. Scanning electron microscopy analyses showed that the grown layer had many voids near the epilayer/seed interface, but no evidence of cracks. Using transmission electron microscopy analyses, we found that the growth direction of the AlN was  and the layer had threading dislocation propagating along  with a density of ∼4 × 108 cm -2.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)