Novel semiconducting quinone for air-stable n-type organic field-effect transistors

Masashi Mamada, Daisuke Kumaki, Jun Ichi Nishida, Shizuo Tokito, Yoshiro Yamashita

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)


Quinones are promising moieties for n-type organic semiconductors due to their high electron affinity. Benzo[1,2-b:4,5-b′]dithiophene-4,8-dione derivative with a quinone moiety have been synthesized, characterized, and used as active layer of organic field-effect transistors (OFETs). This derivative has deep LUMO level, leading to efficient charge-carrier injection and air stability. In addition, it forms a columnar structure with efficient intermolecular π-π and horizontal direction interactions, leading to high electron mobilities. In fact, OFET devices fabricated here showed good n-type characteristics, where the electron mobility was 0.15 cm2 V -1 s-1 under vacuum conditions and above 0.1 cm 2 V-1 s-1 in air.

Original languageEnglish
Pages (from-to)1303-1307
Number of pages5
JournalACS Applied Materials and Interfaces
Issue number5
Publication statusPublished - May 26 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Materials Science


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