Normally-off GaN-MISFET with well-controlled threshold voltage

Masahiko Kuraguchi; Yoshiharu Takada; Takashi Suzuki; Mayumi Hirose; Kunio Tsuda; Wataru Saito; Yasunobu Saito; Ichiro Omura

doi:10.1002/pssa.200674720

Normally-off GaN-MISFET with well-controlled threshold voltage

Masahiko Kuraguchi, Yoshiharu Takada, Takashi Suzuki, Mayumi Hirose, Kunio Tsuda, Wataru Saito, Yasunobu Saito, Ichiro Omura

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A new device structure with four epitaxial layers and a recessed gate is proposed for normally-off operation in GaN-FETs. Employment of this structure makes it possible to control accurately the threshold voltage without accurate control of recess etching depth. The high breakdown voltage and the low on-resistance of the fabricated devices are also reported.

Original language	English
Pages (from-to)	2010-2013
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	204
Issue number	6
DOIs	https://doi.org/10.1002/pssa.200674720
Publication status	Published - Jun 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.200674720

Cite this

@article{eb33598d167046c9af70d4bfc605e864,

title = "Normally-off GaN-MISFET with well-controlled threshold voltage",

abstract = "A new device structure with four epitaxial layers and a recessed gate is proposed for normally-off operation in GaN-FETs. Employment of this structure makes it possible to control accurately the threshold voltage without accurate control of recess etching depth. The high breakdown voltage and the low on-resistance of the fabricated devices are also reported.",

author = "Masahiko Kuraguchi and Yoshiharu Takada and Takashi Suzuki and Mayumi Hirose and Kunio Tsuda and Wataru Saito and Yasunobu Saito and Ichiro Omura",

year = "2007",

month = jun,

doi = "10.1002/pssa.200674720",

language = "English",

volume = "204",

pages = "2010--2013",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "6",

}

TY - JOUR

T1 - Normally-off GaN-MISFET with well-controlled threshold voltage

AU - Kuraguchi, Masahiko

AU - Takada, Yoshiharu

AU - Suzuki, Takashi

AU - Hirose, Mayumi

AU - Tsuda, Kunio

AU - Saito, Wataru

AU - Saito, Yasunobu

AU - Omura, Ichiro

PY - 2007/6

Y1 - 2007/6

N2 - A new device structure with four epitaxial layers and a recessed gate is proposed for normally-off operation in GaN-FETs. Employment of this structure makes it possible to control accurately the threshold voltage without accurate control of recess etching depth. The high breakdown voltage and the low on-resistance of the fabricated devices are also reported.

AB - A new device structure with four epitaxial layers and a recessed gate is proposed for normally-off operation in GaN-FETs. Employment of this structure makes it possible to control accurately the threshold voltage without accurate control of recess etching depth. The high breakdown voltage and the low on-resistance of the fabricated devices are also reported.

UR - http://www.scopus.com/inward/record.url?scp=34547151686&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547151686&partnerID=8YFLogxK

U2 - 10.1002/pssa.200674720

DO - 10.1002/pssa.200674720

M3 - Article

AN - SCOPUS:34547151686

SN - 1862-6300

VL - 204

SP - 2010

EP - 2013

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 6

ER -

Normally-off GaN-MISFET with well-controlled threshold voltage

Abstract

All Science Journal Classification (ASJC) codes

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