Normally-off GaN-MISFET with well-controlled threshold voltage

Masahiko Kuraguchi, Yoshiharu Takada, Takashi Suzuki, Mayumi Hirose, Kunio Tsuda, Wataru Saito, Yasunobu Saito, Ichiro Omura

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


A new device structure with four epitaxial layers and a recessed gate is proposed for normally-off operation in GaN-FETs. Employment of this structure makes it possible to control accurately the threshold voltage without accurate control of recess etching depth. The high breakdown voltage and the low on-resistance of the fabricated devices are also reported.

Original languageEnglish
Pages (from-to)2010-2013
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number6
Publication statusPublished - Jun 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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