Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage

Yuya Kitabayashi; Takuya Kudo; Hidetoshi Tsuboi; Tetsuya Yamada; Dechen Xu; Masanobu Shibata; Daisuke Matsumura; Yuya Hayashi; Mohd Syamsul; Masafumi Inaba; Atsushi Hiraiwa; Hiroshi Kawarada

doi:10.1109/LED.2017.2661340

Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage

Yuya Kitabayashi, Takuya Kudo, Hidetoshi Tsuboi, Tetsuya Yamada, Dechen Xu, Masanobu Shibata, Daisuke Matsumura, Yuya Hayashi, Mohd Syamsul, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada

Research output: Contribution to journal › Article › peer-review

134 Citations (Scopus)

Abstract

Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage V_th of -2.5 - 4 V.

Original language	English
Article number	7837668
Pages (from-to)	363-366
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	3
DOIs	https://doi.org/10.1109/LED.2017.2661340
Publication status	Published - Mar 2017
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2017.2661340

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title = "Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage",

abstract = "Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage Vth of -2.5 - 4 V.",

author = "Yuya Kitabayashi and Takuya Kudo and Hidetoshi Tsuboi and Tetsuya Yamada and Dechen Xu and Masanobu Shibata and Daisuke Matsumura and Yuya Hayashi and Mohd Syamsul and Masafumi Inaba and Atsushi Hiraiwa and Hiroshi Kawarada",

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language = "English",

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T1 - Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage

AU - Kitabayashi, Yuya

AU - Kudo, Takuya

AU - Tsuboi, Hidetoshi

AU - Yamada, Tetsuya

AU - Xu, Dechen

AU - Shibata, Masanobu

AU - Matsumura, Daisuke

AU - Hayashi, Yuya

AU - Syamsul, Mohd

AU - Inaba, Masafumi

AU - Hiraiwa, Atsushi

AU - Kawarada, Hiroshi

PY - 2017/3

Y1 - 2017/3

N2 - Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage Vth of -2.5 - 4 V.

AB - Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage Vth of -2.5 - 4 V.

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Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage

Abstract

All Science Journal Classification (ASJC) codes

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