Nondestructive characterization of oxide/germanium interface by direct-gap photoluminescence analysis

Shoichi Kabuyanagi, Tomonori Nishiumura, Takeaki Yajima, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We demonstrate that direct-gap photoluminescence (PL) analysis is useful for the nondestructive, fast, and in-line characterization of the oxide/ germanium (Ge) interface without making actual devices. The fact that Ge has a quasi-direct gap enables us to utilize direct-gap PL intensity as a good indicator for interface quality estimation. We experimentally confirm the validity of the present analysis, by comparing PL spectra with capacitance-voltage characteristics. The impact of the band bending at the interface on PL intensity is also discussed. Furthermore, the effect of forming gas annealing at oxide/Ge interfaces is discussed by taking advantage of the present method.

Original languageEnglish
Article number051301
JournalApplied Physics Express
Issue number5
Publication statusPublished - May 1 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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