Non-volatile organic memory with sub-millimetre bending radius

Richard Hahnkee Kim; Hae Jin Kim; Insung Bae; Sun Kak Hwang; Dhinesh Babu Velusamy; Suk Man Cho; Kazuto Takaishi; Tsuyoshi Muto; Daisuke Hashizume; Masanobu Uchiyama; Pascal André; Fabrice Mathevet; Benoit Heinrich; Tetsuya Aoyama; Dae Eun Kim; Hyungsuk Lee; Jean Charles Ribierre; Cheolmin Park

doi:10.1038/ncomms4583

Non-volatile organic memory with sub-millimetre bending radius

Richard Hahnkee Kim, Hae Jin Kim, Insung Bae, Sun Kak Hwang, Dhinesh Babu Velusamy, Suk Man Cho, Kazuto Takaishi, Tsuyoshi Muto, Daisuke Hashizume, Masanobu Uchiyama, Pascal André, Fabrice Mathevet, Benoit Heinrich, Tetsuya Aoyama, Dae Eun Kim, Hyungsuk Lee, Jean Charles Ribierre, Cheolmin Park

Center for Organic Photonics and Electronics Research(OPERA)

Research output: Contribution to journal › Article › peer-review

197 Citations (Scopus)

Abstract

High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

Original language	English
Article number	3583
Journal	Nature Communications
Volume	5
DOIs	https://doi.org/10.1038/ncomms4583
Publication status	Published - Apr 8 2014

All Science Journal Classification (ASJC) codes

Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)
Physics and Astronomy(all)

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Kim, R. H., Kim, H. J., Bae, I., Hwang, S. K., Velusamy, D. B., Cho, S. M., Takaishi, K., Muto, T., Hashizume, D., Uchiyama, M., André, P., Mathevet, F., Heinrich, B., Aoyama, T., Kim, D. E., Lee, H., Ribierre, J. C., & Park, C. (2014). Non-volatile organic memory with sub-millimetre bending radius. Nature Communications, 5, Article 3583. https://doi.org/10.1038/ncomms4583

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title = "Non-volatile organic memory with sub-millimetre bending radius",

abstract = "High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.",

author = "Kim, {Richard Hahnkee} and Kim, {Hae Jin} and Insung Bae and Hwang, {Sun Kak} and Velusamy, {Dhinesh Babu} and Cho, {Suk Man} and Kazuto Takaishi and Tsuyoshi Muto and Daisuke Hashizume and Masanobu Uchiyama and Pascal Andr{\'e} and Fabrice Mathevet and Benoit Heinrich and Tetsuya Aoyama and Kim, {Dae Eun} and Hyungsuk Lee and Ribierre, {Jean Charles} and Cheolmin Park",

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AU - Kim, Richard Hahnkee

AU - Kim, Hae Jin

AU - Bae, Insung

AU - Hwang, Sun Kak

AU - Velusamy, Dhinesh Babu

AU - Cho, Suk Man

AU - Takaishi, Kazuto

AU - Muto, Tsuyoshi

AU - Hashizume, Daisuke

AU - Uchiyama, Masanobu

AU - André, Pascal

AU - Mathevet, Fabrice

AU - Heinrich, Benoit

AU - Aoyama, Tetsuya

AU - Kim, Dae Eun

AU - Lee, Hyungsuk

AU - Ribierre, Jean Charles

AU - Park, Cheolmin

PY - 2014/4/8

Y1 - 2014/4/8

N2 - High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

AB - High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

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Non-volatile organic memory with sub-millimetre bending radius

Abstract

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