TY - JOUR
T1 - NO x gas sensing properties of tungsten oxide thin films synthesized by pulsed laser deposition method
AU - Kawasaki, Hiroharu
AU - Namba, Jun
AU - Iwatsuji, Keitarou
AU - Suda, Yoshiaki
AU - Wada, Kenji
AU - Ebihara, Kenji
AU - Ohshima, Tamiko
N1 - Funding Information:
This work was supported in part by the Grant-in-Aid for Scientific Research (B) and the Regional Science Promoter Program and a Research Fund from the Nagasaki Super Technology Development Association. The authors wish to thank Dr. T. Ikegami of Kumamoto University for his helpful discussion. The authors also wish to thank Dr. H. Abe and Mr. H. Yoshida of the Ceramic Research Center of Nagasaki for their technical assistance with the experimental data.
PY - 2002
Y1 - 2002
N2 - Tungsten oxide (WO 3 ) thin films have been deposited on silicon(1 0 0) and alumina substrates by using a pulsed excimer laser deposition method in oxygen gas. The crystalline structure and crystallographic orientation of the WO 3 films, measured by glancing-angle X-ray diffraction (GXRD) system, suggested that there were distinct peaks of crystalline WO 3 (0 0 1), (1 1 1), (2 0 1), (1 2 1), (0 0 2), (1 1 2), and (0 2 2) on the film prepared at P o2 = 10 Pa. The maximum sensitivity of WO 3 film, synthesized at P o2 = 10 Pa for 200 ppm NO x was increased with increasing substrate temperature. The maximum sensitivity for 200 ppm NO and 200 ppm NO 2 were approximately 65 and 170, respectively, at the operating temperature of 400 °C. The substrate temperature results in a notable change in NO x gas sensing properties of WO 3 thin films.
AB - Tungsten oxide (WO 3 ) thin films have been deposited on silicon(1 0 0) and alumina substrates by using a pulsed excimer laser deposition method in oxygen gas. The crystalline structure and crystallographic orientation of the WO 3 films, measured by glancing-angle X-ray diffraction (GXRD) system, suggested that there were distinct peaks of crystalline WO 3 (0 0 1), (1 1 1), (2 0 1), (1 2 1), (0 0 2), (1 1 2), and (0 2 2) on the film prepared at P o2 = 10 Pa. The maximum sensitivity of WO 3 film, synthesized at P o2 = 10 Pa for 200 ppm NO x was increased with increasing substrate temperature. The maximum sensitivity for 200 ppm NO and 200 ppm NO 2 were approximately 65 and 170, respectively, at the operating temperature of 400 °C. The substrate temperature results in a notable change in NO x gas sensing properties of WO 3 thin films.
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U2 - 10.1016/S0169-4332(02)00333-1
DO - 10.1016/S0169-4332(02)00333-1
M3 - Conference article
AN - SCOPUS:0036424527
SN - 0169-4332
VL - 197-198
SP - 547
EP - 551
JO - Applied Surface Science
JF - Applied Surface Science
T2 - Cola 2001
Y2 - 1 October 2001 through 1 October 2001
ER -