Nitrogen Trapping of Boron and Phosphorus in Silicon

V. G. Zavodinsky, A. V. Visikovski, I. A. Kuyanov, J. Da̧browski

Research output: Contribution to journalArticlepeer-review


Using ab initio (Hartree-Fock and local density approximation) and semiempirical (Austin Model 1) calculations we have studied the energetics and electronic structures of N+B and N+P complexes. We have found that these complexes are electrically inactive. The energy gains are 1.6 eV for the N+B coupling and 2.4 eV for the N+P pairing. The N-P and N-B interatomic equilibrium distances are about 3.5 A for the both complexes.

Original languageEnglish
Pages (from-to)13-18
Number of pages6
JournalPhysics of Low-Dimensional Structures
Issue number3-4
Publication statusPublished - 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Nitrogen Trapping of Boron and Phosphorus in Silicon'. Together they form a unique fingerprint.

Cite this