Nickel‐related deep levels in silicon studied by combined hall effect and DLTS measurement

H. Kitagawa, H. Nakashima

Research output: Contribution to journal › Article › peer-review

All Science Journal Classification (ASJC) codes

@article{f690b4209016457cba07b9f73722f5cc,

title = "Nickel‐related deep levels in silicon studied by combined hall effect and DLTS measurement",

author = "H. Kitagawa and H. Nakashima",

year = "1987",

month = jan,

day = "16",

doi = "10.1002/pssa.2210990150",

language = "English",

volume = "99",

pages = "K49--K52",

journal = "physica status solidi (a)",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - Nickel‐related deep levels in silicon studied by combined hall effect and DLTS measurement

AU - Kitagawa, H.

AU - Nakashima, H.

PY - 1987/1/16

Y1 - 1987/1/16

UR - http://www.scopus.com/inward/record.url?scp=0023061061&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023061061&partnerID=8YFLogxK

U2 - 10.1002/pssa.2210990150

DO - 10.1002/pssa.2210990150

M3 - Article

AN - SCOPUS:0023061061

SN - 0031-8965

VL - 99

SP - K49-K52

JO - physica status solidi (a)

JF - physica status solidi (a)

IS - 1

ER -