Ni suicide and germanide technology for contacts and metal gates in MOSFET applications

Shigeaki Zaima; Osamu Nakatsuka; Hiroki Kondo; Mitsuo Sakashita; Akira Sakai; Masaki Ogawa

doi:10.1109/ICSICT.2006.306218

Ni suicide and germanide technology for contacts and metal gates in MOSFET applications

Shigeaki Zaima
, Osamu Nakatsuka
, Hiroki Kondo
, Mitsuo Sakashita
, Akira Sakai
, Masaki Ogawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	322-325
Number of pages	4
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306218
Publication status	Published - 2006
Externally published	Yes
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: Oct 23 2006 → Oct 26 2006

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	10/23/06 → 10/26/06

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2006.306218

Cite this

Zaima, S., Nakatsuka, O., Kondo, H., Sakashita, M., Sakai, A., & Ogawa, M. (2006). Ni suicide and germanide technology for contacts and metal gates in MOSFET applications. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 322-325). Article 4098097 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306218

Ni suicide and germanide technology for contacts and metal gates in MOSFET applications. / Zaima, Shigeaki; Nakatsuka, Osamu; Kondo, Hiroki et al.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 322-325 4098097 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zaima, S, Nakatsuka, O, Kondo, H, Sakashita, M, Sakai, A & Ogawa, M 2006, Ni suicide and germanide technology for contacts and metal gates in MOSFET applications. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098097, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 322-325, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 10/23/06. https://doi.org/10.1109/ICSICT.2006.306218

Zaima S, Nakatsuka O, Kondo H, Sakashita M, Sakai A, Ogawa M. Ni suicide and germanide technology for contacts and metal gates in MOSFET applications. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 322-325. 4098097. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306218

Zaima, Shigeaki ; Nakatsuka, Osamu ; Kondo, Hiroki et al. / Ni suicide and germanide technology for contacts and metal gates in MOSFET applications. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 322-325 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

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author = "Shigeaki Zaima and Osamu Nakatsuka and Hiroki Kondo and Mitsuo Sakashita and Akira Sakai and Masaki Ogawa",

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AU - Nakatsuka, Osamu

AU - Kondo, Hiroki

AU - Sakashita, Mitsuo

AU - Sakai, Akira

AU - Ogawa, Masaki

PY - 2006

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DO - 10.1109/ICSICT.2006.306218

M3 - Conference contribution

AN - SCOPUS:34547260163

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SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 322

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BT - ICSICT-2006

PB - IEEE Computer Society

T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology

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ER -

Ni suicide and germanide technology for contacts and metal gates in MOSFET applications

Publication series

Other

UN SDGs

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this