Ni-imprint induced solid-phase crystallization in Si1-xGe x (x: 0-1) on insulator

Kaoru Toko, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Tanemasa Asano, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)


Position control of solid-phase crystallization in the amorphous Si1-x Gex (x: 0-1) films on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation at the imprinted positions proceeded approximately 2-20 times, depending on Ge fraction, faster than the conventional solid-phase crystallization, which was due to the catalytic effect of Ni. As a result, large SiGe crystal regions (∼2 μm) were obtained at controlled positions. On the other hand, the growth velocity did not changed, which suggested that grown regions contained few residual Ni atoms.

Original languageEnglish
Article number042111
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Ni-imprint induced solid-phase crystallization in Si1-xGe x (x: 0-1) on insulator'. Together they form a unique fingerprint.

Cite this