New substrate PrGaO3 for a high Tc superconducting YBa2Cu3Ox epitaxial film

Masahiro Sasaura; Masashi Mukaida; Shintaro Miyazawa

doi:10.1063/1.104197

New substrate PrGaO₃ for a high T_c superconducting YBa₂Cu₃O_x epitaxial film

Masahiro Sasaura, Masashi Mukaida, Shintaro Miyazawa

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The potential of a new substrate, PrGaO₃, for high T_c oxide superconducting films is investigated and results indicate it is the most suitable material studied so far. Single crystals were grown by the Czochralski method. The lattice mismatch between PrGaO₃ and YBa ₂Cu₃O_x superconductor was estimated to be only 0.02% at the elevated deposition temperature. The dielectric constant value was 24 at 10 kHz. The c-axis oriented YBa₂Cu₃O_x films were deposited onto PrGaO₃ substrates by the laser ablation technique. Their superconducting transition temperature was as high as 90 K, even for a film thickness of only 500 Å.

Original language	English
Pages (from-to)	2728-2729
Number of pages	2
Journal	Applied Physics Letters
Volume	57
Issue number	25
DOIs	https://doi.org/10.1063/1.104197
Publication status	Published - 1990
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.104197

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title = "New substrate PrGaO3 for a high Tc superconducting YBa2Cu3Ox epitaxial film",

abstract = "The potential of a new substrate, PrGaO3, for high Tc oxide superconducting films is investigated and results indicate it is the most suitable material studied so far. Single crystals were grown by the Czochralski method. The lattice mismatch between PrGaO3 and YBa 2Cu3Ox superconductor was estimated to be only 0.02% at the elevated deposition temperature. The dielectric constant value was 24 at 10 kHz. The c-axis oriented YBa2Cu3Ox films were deposited onto PrGaO3 substrates by the laser ablation technique. Their superconducting transition temperature was as high as 90 K, even for a film thickness of only 500 {\AA}.",

author = "Masahiro Sasaura and Masashi Mukaida and Shintaro Miyazawa",

year = "1990",

doi = "10.1063/1.104197",

language = "English",

volume = "57",

pages = "2728--2729",

journal = "Applied Physics Letters",

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T1 - New substrate PrGaO3 for a high Tc superconducting YBa2Cu3Ox epitaxial film

AU - Sasaura, Masahiro

AU - Mukaida, Masashi

AU - Miyazawa, Shintaro

PY - 1990

Y1 - 1990

N2 - The potential of a new substrate, PrGaO3, for high Tc oxide superconducting films is investigated and results indicate it is the most suitable material studied so far. Single crystals were grown by the Czochralski method. The lattice mismatch between PrGaO3 and YBa 2Cu3Ox superconductor was estimated to be only 0.02% at the elevated deposition temperature. The dielectric constant value was 24 at 10 kHz. The c-axis oriented YBa2Cu3Ox films were deposited onto PrGaO3 substrates by the laser ablation technique. Their superconducting transition temperature was as high as 90 K, even for a film thickness of only 500 Å.

AB - The potential of a new substrate, PrGaO3, for high Tc oxide superconducting films is investigated and results indicate it is the most suitable material studied so far. Single crystals were grown by the Czochralski method. The lattice mismatch between PrGaO3 and YBa 2Cu3Ox superconductor was estimated to be only 0.02% at the elevated deposition temperature. The dielectric constant value was 24 at 10 kHz. The c-axis oriented YBa2Cu3Ox films were deposited onto PrGaO3 substrates by the laser ablation technique. Their superconducting transition temperature was as high as 90 K, even for a film thickness of only 500 Å.

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JF - Applied Physics Letters

IS - 25

ER -

New substrate PrGaO₃ for a high T_c superconducting YBa₂Cu₃O_x epitaxial film

Abstract

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