@inbook{7f3d39d0482a4ebcba968de6376eeadf,
title = "New self-aligned process for fabrication of microemitter arrays using selective etching of silicon",
abstract = "Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10 V is demonstrated.",
author = "Tanemasa Asano and Junji Yasuda",
year = "1996",
month = dec,
language = "English",
series = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers",
number = "12 B",
pages = "6347--6695",
editor = "Y. Aoyagi and N. Atoda and T. Fukui and M. Komuro and M. Kotera and {et al}, al",
booktitle = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers",
edition = "12 B",
note = "Proceedings of the 1996 9th International MicroProcess Conference, MPC'96 ; Conference date: 08-07-1996 Through 11-07-1996",
}