New Positive EB Resist with Strong Resistance to Plasma Damage

Kazuo Yamaguchi; Hiroyuki Ozaki; Akira Hirao; Nobumitsu Hirose; Yuuichi Harada; Yoshinori Uzawa; Matsuo Sekine; Shigeru Yoshimori; Mitsuo Kawamura

doi:10.1149/1.2069330

New Positive EB Resist with Strong Resistance to Plasma Damage

Kazuo Yamaguchi, Hiroyuki Ozaki, Akira Hirao, Nobumitsu Hirose, Yuuichi Harada, Yoshinori Uzawa, Matsuo Sekine, Shigeru Yoshimori, Mitsuo Kawamura

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Copolymers of methyl methacrylate (MMA) and 3–triethoxysilylpropyl methacrylate (ESPMA) were synthesized and employed as an electron beam (EB) resist. The copolymer with a content of 10 mol% ESPMA worked as a positive EB resist and had 4–10 times as strong a resistance as poly(methylmethacrylate) (PMMA) to CBrF₃ plasma etching. The resolution and sensitivity were almost the same as those of PMMA. From experimental results concerning the insolubility of the plasma–irradiated copolymer and measurement of IR spectra, the enhanced resistance to plasma etching appears to be caused by formation of a cross–linking structure based on the Si–O–Si linkage.

Original language	English
Pages (from-to)	L33-L34
Journal	Journal of the Electrochemical Society
Volume	139
Issue number	3
DOIs	https://doi.org/10.1149/1.2069330
Publication status	Published - Mar 1992
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.2069330

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title = "New Positive EB Resist with Strong Resistance to Plasma Damage",

abstract = "Copolymers of methyl methacrylate (MMA) and 3–triethoxysilylpropyl methacrylate (ESPMA) were synthesized and employed as an electron beam (EB) resist. The copolymer with a content of 10 mol% ESPMA worked as a positive EB resist and had 4–10 times as strong a resistance as poly(methylmethacrylate) (PMMA) to CBrF3 plasma etching. The resolution and sensitivity were almost the same as those of PMMA. From experimental results concerning the insolubility of the plasma–irradiated copolymer and measurement of IR spectra, the enhanced resistance to plasma etching appears to be caused by formation of a cross–linking structure based on the Si–O–Si linkage.",

author = "Kazuo Yamaguchi and Hiroyuki Ozaki and Akira Hirao and Nobumitsu Hirose and Yuuichi Harada and Yoshinori Uzawa and Matsuo Sekine and Shigeru Yoshimori and Mitsuo Kawamura",

year = "1992",

month = mar,

doi = "10.1149/1.2069330",

language = "English",

volume = "139",

pages = "L33--L34",

journal = "Journal of the Electrochemical Society",

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TY - JOUR

T1 - New Positive EB Resist with Strong Resistance to Plasma Damage

AU - Yamaguchi, Kazuo

AU - Ozaki, Hiroyuki

AU - Hirao, Akira

AU - Hirose, Nobumitsu

AU - Harada, Yuuichi

AU - Uzawa, Yoshinori

AU - Sekine, Matsuo

AU - Yoshimori, Shigeru

AU - Kawamura, Mitsuo

PY - 1992/3

Y1 - 1992/3

N2 - Copolymers of methyl methacrylate (MMA) and 3–triethoxysilylpropyl methacrylate (ESPMA) were synthesized and employed as an electron beam (EB) resist. The copolymer with a content of 10 mol% ESPMA worked as a positive EB resist and had 4–10 times as strong a resistance as poly(methylmethacrylate) (PMMA) to CBrF3 plasma etching. The resolution and sensitivity were almost the same as those of PMMA. From experimental results concerning the insolubility of the plasma–irradiated copolymer and measurement of IR spectra, the enhanced resistance to plasma etching appears to be caused by formation of a cross–linking structure based on the Si–O–Si linkage.

AB - Copolymers of methyl methacrylate (MMA) and 3–triethoxysilylpropyl methacrylate (ESPMA) were synthesized and employed as an electron beam (EB) resist. The copolymer with a content of 10 mol% ESPMA worked as a positive EB resist and had 4–10 times as strong a resistance as poly(methylmethacrylate) (PMMA) to CBrF3 plasma etching. The resolution and sensitivity were almost the same as those of PMMA. From experimental results concerning the insolubility of the plasma–irradiated copolymer and measurement of IR spectra, the enhanced resistance to plasma etching appears to be caused by formation of a cross–linking structure based on the Si–O–Si linkage.

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DO - 10.1149/1.2069330

M3 - Article

AN - SCOPUS:0026839060

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VL - 139

SP - L33-L34

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

New Positive EB Resist with Strong Resistance to Plasma Damage

Abstract

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