New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

K. Kakushima, T. Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    A new methodology to evaluate the process temperature dependence of the minority carrier lifetime has been developed. A TEG layout with p+-stripes on an n-Si substrate was designed. When all the p+n junctions are made forward, the minority carrier diffusion current flows one dimensionally into the substrate. On the other hand, for making only the one center p+n junction forward, the current spreads laterally and flows cylindrically into the substrate. By the difference in the flow path of the minority carrier diffusion, we can successfully extract the minority carrier lifetime. We applied this methodology to the evaluation of the minority carrier lifetime depending on process temperatures and confirmed the lifetime degradation for high temperature process.

    Original languageEnglish
    Title of host publication2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages105-106
    Number of pages2
    ISBN (Electronic)9781538667002
    DOIs
    Publication statusPublished - Oct 22 2018
    Event32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018 - Honolulu, United States
    Duration: Jun 18 2018Jun 22 2018

    Publication series

    NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers
    Volume2018-June

    Other

    Other32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
    Country/TerritoryUnited States
    CityHonolulu
    Period6/18/186/22/18

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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