New distributed amplifier design using transmission-gate FET's

Yuhki Imai, Shunji Kimura, Yohtaro Umeda, Takatomo Enoki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We propose a new distributed amplifier design using a transmission-gate FET (TGFET) whose gate is embedded in the gate-artificial line. The new technique greatly simplifies the gate-artificial-line design, with no meandering or T-junction lines. The test TGFET distributed amplifier, using 0.1-μm-gate-length InP HEMT's showed a promising bandwidth performance of 100 GHz.

Original languageEnglish
Pages (from-to)357-359
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Issue number10
Publication statusPublished - Oct 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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