New distributed amplifier design using transmission-gate FET's

Yuhki Imai; Shunji Kimura; Yohtaro Umeda; Takatomo Enoki

doi:10.1109/75.536944

New distributed amplifier design using transmission-gate FET's

Yuhki Imai, Shunji Kimura, Yohtaro Umeda, Takatomo Enoki

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We propose a new distributed amplifier design using a transmission-gate FET (TGFET) whose gate is embedded in the gate-artificial line. The new technique greatly simplifies the gate-artificial-line design, with no meandering or T-junction lines. The test TGFET distributed amplifier, using 0.1-μm-gate-length InP HEMT's showed a promising bandwidth performance of 100 GHz.

Original language	English
Pages (from-to)	357-359
Number of pages	3
Journal	IEEE Microwave and Guided Wave Letters
Volume	6
Issue number	10
DOIs	https://doi.org/10.1109/75.536944
Publication status	Published - Oct 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1109/75.536944

Cite this

@article{d8571424b7ff4a9b8ffc9302f084e942,

title = "New distributed amplifier design using transmission-gate FET's",

abstract = "We propose a new distributed amplifier design using a transmission-gate FET (TGFET) whose gate is embedded in the gate-artificial line. The new technique greatly simplifies the gate-artificial-line design, with no meandering or T-junction lines. The test TGFET distributed amplifier, using 0.1-μm-gate-length InP HEMT's showed a promising bandwidth performance of 100 GHz.",

author = "Yuhki Imai and Shunji Kimura and Yohtaro Umeda and Takatomo Enoki",

year = "1996",

month = oct,

doi = "10.1109/75.536944",

language = "English",

volume = "6",

pages = "357--359",

journal = "IEEE Microwave and Guided Wave Letters",

issn = "1051-8207",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - New distributed amplifier design using transmission-gate FET's

AU - Imai, Yuhki

AU - Kimura, Shunji

AU - Umeda, Yohtaro

AU - Enoki, Takatomo

PY - 1996/10

Y1 - 1996/10

N2 - We propose a new distributed amplifier design using a transmission-gate FET (TGFET) whose gate is embedded in the gate-artificial line. The new technique greatly simplifies the gate-artificial-line design, with no meandering or T-junction lines. The test TGFET distributed amplifier, using 0.1-μm-gate-length InP HEMT's showed a promising bandwidth performance of 100 GHz.

AB - We propose a new distributed amplifier design using a transmission-gate FET (TGFET) whose gate is embedded in the gate-artificial line. The new technique greatly simplifies the gate-artificial-line design, with no meandering or T-junction lines. The test TGFET distributed amplifier, using 0.1-μm-gate-length InP HEMT's showed a promising bandwidth performance of 100 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0030269493&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030269493&partnerID=8YFLogxK

U2 - 10.1109/75.536944

DO - 10.1109/75.536944

M3 - Article

AN - SCOPUS:0030269493

SN - 1051-8207

VL - 6

SP - 357

EP - 359

JO - IEEE Microwave and Guided Wave Letters

JF - IEEE Microwave and Guided Wave Letters

IS - 10

ER -

New distributed amplifier design using transmission-gate FET's

Abstract

All Science Journal Classification (ASJC) codes

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