New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD

Yoshifumi Ikoma, Kenta Ono, Mutsunori Uenuma, Tomohiko Ogata, Teruaki Motooka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.

    Original languageEnglish
    Title of host publicationSixth International Conference on Thin Film Physics and Applications
    DOIs
    Publication statusPublished - 2008
    Event6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China
    Duration: Sept 25 2007Sept 28 2007

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume6984
    ISSN (Print)0277-786X

    Other

    Other6th International Conference on Thin Film Physics and Applications, TFPA 2007
    Country/TerritoryChina
    CityShanghai
    Period9/25/079/28/07

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Applied Mathematics
    • Electrical and Electronic Engineering
    • Computer Science Applications

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