Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method

Shin Ichiro Abe; Yukinobu Watanabe; Nozomi Shibano; Nobuyuki Sano; Hiroshi Furuta; Masafumi Tsutsui; Taiki Uemura; Takahiko Arakawa

doi:10.1109/IRPS.2012.6241928

Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method

Shin Ichiro Abe, Yukinobu Watanabe, Nozomi Shibano, Nobuyuki Sano, Hiroshi Furuta, Masafumi Tsutsui, Taiki Uemura, Takahiko Arakawa

Engineering Science for Advanced energy system

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

17 Citations (Scopus)

Abstract

We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25 nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS code system. The resulting scaling trend of SERs per bit is still decreasing similar to other predictions. From this analysis, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that terrestrial neutrons with energies up to several hundreds of MeV have a significant contribution to soft errors regardless of design rule and critical charge.

Original language	English
Title of host publication	2012 IEEE International Reliability Physics Symposium, IRPS 2012
Pages	SE.3.1-SE.3.6
DOIs	https://doi.org/10.1109/IRPS.2012.6241928
Publication status	Published - 2012
Event	2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States Duration: Apr 15 2012 → Apr 19 2012

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	2012 IEEE International Reliability Physics Symposium, IRPS 2012
Country/Territory	United States
City	Anaheim, CA
Period	4/15/12 → 4/19/12

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/IRPS.2012.6241928

Cite this

Abe, S. I., Watanabe, Y., Shibano, N., Sano, N., Furuta, H., Tsutsui, M., Uemura, T., & Arakawa, T. (2012). Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method. In 2012 IEEE International Reliability Physics Symposium, IRPS 2012 (pp. SE.3.1-SE.3.6). Article 6241928 (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2012.6241928

Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method. / Abe, Shin Ichiro; Watanabe, Yukinobu; Shibano, Nozomi et al.
2012 IEEE International Reliability Physics Symposium, IRPS 2012. 2012. p. SE.3.1-SE.3.6 6241928 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abe, SI, Watanabe, Y, Shibano, N, Sano, N, Furuta, H, Tsutsui, M, Uemura, T & Arakawa, T 2012, Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method. in 2012 IEEE International Reliability Physics Symposium, IRPS 2012., 6241928, IEEE International Reliability Physics Symposium Proceedings, pp. SE.3.1-SE.3.6, 2012 IEEE International Reliability Physics Symposium, IRPS 2012, Anaheim, CA, United States, 4/15/12. https://doi.org/10.1109/IRPS.2012.6241928

Abe SI, Watanabe Y, Shibano N, Sano N, Furuta H, Tsutsui M et al. Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method. In 2012 IEEE International Reliability Physics Symposium, IRPS 2012. 2012. p. SE.3.1-SE.3.6. 6241928. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2012.6241928

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abstract = "We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25 nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS code system. The resulting scaling trend of SERs per bit is still decreasing similar to other predictions. From this analysis, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that terrestrial neutrons with energies up to several hundreds of MeV have a significant contribution to soft errors regardless of design rule and critical charge.",

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AU - Sano, Nobuyuki

AU - Furuta, Hiroshi

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AB - We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25 nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS code system. The resulting scaling trend of SERs per bit is still decreasing similar to other predictions. From this analysis, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that terrestrial neutrons with energies up to several hundreds of MeV have a significant contribution to soft errors regardless of design rule and critical charge.

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Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method

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