Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs

Wang Liao; Masanori Hashimoto; Seiya Manabe; Yukinobu Watanabe; Shin Ichiro Abe; Keita Nakano; Hayato Takeshita; Motonobu Tampo; Soshi Takeshita; Yasuhiro Miyake

doi:10.1109/IRPS.2019.8720568

Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs

Wang Liao, Masanori Hashimoto, Seiya Manabe, Yukinobu Watanabe, Shin Ichiro Abe, Keita Nakano, Hayato Takeshita, Motonobu Tampo, Soshi Takeshita, Yasuhiro Miyake

Engineering Science for Advanced energy system

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

In this paper, we compare the negative and positive muon-induced SEU event cross sections of 28-nm and 65-nm planar bulk CMOS SRAMs. Our measurement results show a 3.6 X increase in muon-induced SEU event cross section from 65-nm to 28-nm technology, and negative muon-induced SEU event cross section is 3.3 X larger compared to positive muons at 28-nm technology. This result is consistent with the previous works reporting muon-induced SEU event cross section increases with technology scaling. The measured result also suggests the contribution of direct ionization to the total SEU event cross section is 54.1% at 28-nm node with operating voltage of 0.6 V while it is 1.8% at 65-nm node with 0.9 V.

Original language	English
Title of host publication	2019 IEEE International Reliability Physics Symposium, IRPS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538695043
DOIs	https://doi.org/10.1109/IRPS.2019.8720568
Publication status	Published - May 22 2019
Event	2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, United States Duration: Mar 31 2019 → Apr 4 2019

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2019-March
ISSN (Print)	1541-7026

Conference

Conference	2019 IEEE International Reliability Physics Symposium, IRPS 2019
Country/Territory	United States
City	Monterey
Period	3/31/19 → 4/4/19

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/IRPS.2019.8720568

Cite this

Liao, W., Hashimoto, M., Manabe, S., Watanabe, Y., Abe, S. I., Nakano, K., Takeshita, H., Tampo, M., Takeshita, S., & Miyake, Y. (2019). Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. In 2019 IEEE International Reliability Physics Symposium, IRPS 2019 Article 8720568 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2019.8720568

Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. / Liao, Wang; Hashimoto, Masanori; Manabe, Seiya et al.
2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8720568 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liao, W, Hashimoto, M, Manabe, S, Watanabe, Y, Abe, SI, Nakano, K, Takeshita, H, Tampo, M, Takeshita, S & Miyake, Y 2019, Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. in 2019 IEEE International Reliability Physics Symposium, IRPS 2019., 8720568, IEEE International Reliability Physics Symposium Proceedings, vol. 2019-March, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, United States, 3/31/19. https://doi.org/10.1109/IRPS.2019.8720568

Liao W, Hashimoto M, Manabe S, Watanabe Y, Abe SI, Nakano K et al. Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. In 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8720568. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2019.8720568

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title = "Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs",

abstract = "In this paper, we compare the negative and positive muon-induced SEU event cross sections of 28-nm and 65-nm planar bulk CMOS SRAMs. Our measurement results show a 3.6 X increase in muon-induced SEU event cross section from 65-nm to 28-nm technology, and negative muon-induced SEU event cross section is 3.3 X larger compared to positive muons at 28-nm technology. This result is consistent with the previous works reporting muon-induced SEU event cross section increases with technology scaling. The measured result also suggests the contribution of direct ionization to the total SEU event cross section is 54.1% at 28-nm node with operating voltage of 0.6 V while it is 1.8% at 65-nm node with 0.9 V.",

author = "Wang Liao and Masanori Hashimoto and Seiya Manabe and Yukinobu Watanabe and Abe, {Shin Ichiro} and Keita Nakano and Hayato Takeshita and Motonobu Tampo and Soshi Takeshita and Yasuhiro Miyake",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by JST OPERA and Grant-in-Aid for Scientific Research (B) from the Japan Society for the Promotion of Science under Grant 16H03906. The muon experiment for 28-nm SRAM was performed at Materials and Life Science Experimental Facility of the J-PARC under user programs No. 2017B0109. Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Reliability Physics Symposium, IRPS 2019 ; Conference date: 31-03-2019 Through 04-04-2019",

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doi = "10.1109/IRPS.2019.8720568",

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AU - Liao, Wang

AU - Hashimoto, Masanori

AU - Manabe, Seiya

AU - Watanabe, Yukinobu

AU - Abe, Shin Ichiro

AU - Nakano, Keita

AU - Takeshita, Hayato

AU - Tampo, Motonobu

AU - Takeshita, Soshi

AU - Miyake, Yasuhiro

N1 - Funding Information: ACKNOWLEDGMENT This work was supported by JST OPERA and Grant-in-Aid for Scientific Research (B) from the Japan Society for the Promotion of Science under Grant 16H03906. The muon experiment for 28-nm SRAM was performed at Materials and Life Science Experimental Facility of the J-PARC under user programs No. 2017B0109. Publisher Copyright: © 2019 IEEE.

PY - 2019/5/22

Y1 - 2019/5/22

N2 - In this paper, we compare the negative and positive muon-induced SEU event cross sections of 28-nm and 65-nm planar bulk CMOS SRAMs. Our measurement results show a 3.6 X increase in muon-induced SEU event cross section from 65-nm to 28-nm technology, and negative muon-induced SEU event cross section is 3.3 X larger compared to positive muons at 28-nm technology. This result is consistent with the previous works reporting muon-induced SEU event cross section increases with technology scaling. The measured result also suggests the contribution of direct ionization to the total SEU event cross section is 54.1% at 28-nm node with operating voltage of 0.6 V while it is 1.8% at 65-nm node with 0.9 V.

AB - In this paper, we compare the negative and positive muon-induced SEU event cross sections of 28-nm and 65-nm planar bulk CMOS SRAMs. Our measurement results show a 3.6 X increase in muon-induced SEU event cross section from 65-nm to 28-nm technology, and negative muon-induced SEU event cross section is 3.3 X larger compared to positive muons at 28-nm technology. This result is consistent with the previous works reporting muon-induced SEU event cross section increases with technology scaling. The measured result also suggests the contribution of direct ionization to the total SEU event cross section is 54.1% at 28-nm node with operating voltage of 0.6 V while it is 1.8% at 65-nm node with 0.9 V.

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Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs

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