Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures

Shota Izumi, Mahmoud Shaban, Nathaporn Promros, Keita Nomoto, Tsuyoshi Yoshitake

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    34 Citations (Scopus)


    n-type β-FeSi2/p-type Si heterojunction photodiodes were fabricated by facing-targets direct-current sputtering, and their near-infrared photodetection properties were studied in the temperature range of 50-300 K. At 300 K, devices biased at -5 V exhibited a current responsivity of 16.6 mA/W. The measured specific detectivity was remarkably improved from 3.5 × 10 9 to 1.4 × 1011 cmHz1/2/W as the devices were cooled from 300 K down to 50 K. This improvement is mainly attributable to distinguished suppression in heterojunction leakage current at low temperatures. The obtained results indicate that β-FeSi2/Si heterojunctions offer high potential to be employed as near-infrared photodetectors that are compatible with the current Si technology.

    Original languageEnglish
    Article number032107
    JournalApplied Physics Letters
    Issue number3
    Publication statusPublished - Jan 21 2013

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)


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