Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures

Shota Izumi; Mahmoud Shaban; Nathaporn Promros; Keita Nomoto; Tsuyoshi Yoshitake

doi:10.1063/1.4789391

Near-infrared photodetection of β-FeSi₂/Si heterojunction photodiodes at low temperatures

Shota Izumi, Mahmoud Shaban, Nathaporn Promros, Keita Nomoto, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

n-type β-FeSi₂/p-type Si heterojunction photodiodes were fabricated by facing-targets direct-current sputtering, and their near-infrared photodetection properties were studied in the temperature range of 50-300 K. At 300 K, devices biased at -5 V exhibited a current responsivity of 16.6 mA/W. The measured specific detectivity was remarkably improved from 3.5 × 10 ⁹ to 1.4 × 10¹¹ cmHz^1/2/W as the devices were cooled from 300 K down to 50 K. This improvement is mainly attributable to distinguished suppression in heterojunction leakage current at low temperatures. The obtained results indicate that β-FeSi₂/Si heterojunctions offer high potential to be employed as near-infrared photodetectors that are compatible with the current Si technology.

Original language	English
Article number	032107
Journal	Applied Physics Letters
Volume	102
Issue number	3
DOIs	https://doi.org/10.1063/1.4789391
Publication status	Published - Jan 21 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4789391

Cite this

@article{b0dc1e5b7c6e49dc984c546e0f806835,

title = "Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures",

abstract = "n-type β-FeSi2/p-type Si heterojunction photodiodes were fabricated by facing-targets direct-current sputtering, and their near-infrared photodetection properties were studied in the temperature range of 50-300 K. At 300 K, devices biased at -5 V exhibited a current responsivity of 16.6 mA/W. The measured specific detectivity was remarkably improved from 3.5 × 10 9 to 1.4 × 1011 cmHz1/2/W as the devices were cooled from 300 K down to 50 K. This improvement is mainly attributable to distinguished suppression in heterojunction leakage current at low temperatures. The obtained results indicate that β-FeSi2/Si heterojunctions offer high potential to be employed as near-infrared photodetectors that are compatible with the current Si technology.",

author = "Shota Izumi and Mahmoud Shaban and Nathaporn Promros and Keita Nomoto and Tsuyoshi Yoshitake",

year = "2013",

month = jan,

day = "21",

doi = "10.1063/1.4789391",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures

AU - Izumi, Shota

AU - Shaban, Mahmoud

AU - Promros, Nathaporn

AU - Nomoto, Keita

AU - Yoshitake, Tsuyoshi

PY - 2013/1/21

Y1 - 2013/1/21

N2 - n-type β-FeSi2/p-type Si heterojunction photodiodes were fabricated by facing-targets direct-current sputtering, and their near-infrared photodetection properties were studied in the temperature range of 50-300 K. At 300 K, devices biased at -5 V exhibited a current responsivity of 16.6 mA/W. The measured specific detectivity was remarkably improved from 3.5 × 10 9 to 1.4 × 1011 cmHz1/2/W as the devices were cooled from 300 K down to 50 K. This improvement is mainly attributable to distinguished suppression in heterojunction leakage current at low temperatures. The obtained results indicate that β-FeSi2/Si heterojunctions offer high potential to be employed as near-infrared photodetectors that are compatible with the current Si technology.

AB - n-type β-FeSi2/p-type Si heterojunction photodiodes were fabricated by facing-targets direct-current sputtering, and their near-infrared photodetection properties were studied in the temperature range of 50-300 K. At 300 K, devices biased at -5 V exhibited a current responsivity of 16.6 mA/W. The measured specific detectivity was remarkably improved from 3.5 × 10 9 to 1.4 × 1011 cmHz1/2/W as the devices were cooled from 300 K down to 50 K. This improvement is mainly attributable to distinguished suppression in heterojunction leakage current at low temperatures. The obtained results indicate that β-FeSi2/Si heterojunctions offer high potential to be employed as near-infrared photodetectors that are compatible with the current Si technology.

UR - http://www.scopus.com/inward/record.url?scp=84872956226&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872956226&partnerID=8YFLogxK

U2 - 10.1063/1.4789391

DO - 10.1063/1.4789391

M3 - Article

AN - SCOPUS:84872956226

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032107

ER -

Near-infrared photodetection of β-FeSi₂/Si heterojunction photodiodes at low temperatures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this