TY - JOUR
T1 - Near infrared electroluminescence from Nd(TTA)3phen in solution-processed small molecule organic light-emitting diodes
AU - Shahalizad, Afshin
AU - D'Aléo, Anthony
AU - Andraud, Chantal
AU - Sazzad, Muhammad Hasnan
AU - Kim, Dae Hyeon
AU - Tsuchiya, Youichi
AU - Ribierre, Jean Charles
AU - Nunzi, Jean Michel
AU - Adachi, Chihaya
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - We report on the near infrared electroluminescence properties of a Nd3+ complex with thenoyltrifluoroacetone and 1,10-phenantroline ligands in solution-processed organic light-emitting diodes. Spin-coated blends containing a 1,3-bis(9-carbazolyl)benzene host doped with the Nd3+ complex were found to exhibit a photoluminescence quantum yield of about 0.5%, regardless of the doping concentration level. Electroluminescent devices based on these small molecule blends showed the characteristic emission of Nd3+ at 890, 1060 and 1330 nm with an external quantum efficiency as high as 0.022%. These improved performances were mainly attributed to direct charge trapping and exciton formation on the near infrared emitter. Importantly, the efficiency roll-off at high current densities due to triplet-triplet exciton annihilation in the device containing 20 wt% of the complex was lower than what is typically observed in lanthanide complex-based electroluminescent devices. This is presumably due to the high triplet energy of the host material, which prevents guest-to-host energy-back transfer and thus host-guest triplet-triplet exciton annihilation.
AB - We report on the near infrared electroluminescence properties of a Nd3+ complex with thenoyltrifluoroacetone and 1,10-phenantroline ligands in solution-processed organic light-emitting diodes. Spin-coated blends containing a 1,3-bis(9-carbazolyl)benzene host doped with the Nd3+ complex were found to exhibit a photoluminescence quantum yield of about 0.5%, regardless of the doping concentration level. Electroluminescent devices based on these small molecule blends showed the characteristic emission of Nd3+ at 890, 1060 and 1330 nm with an external quantum efficiency as high as 0.022%. These improved performances were mainly attributed to direct charge trapping and exciton formation on the near infrared emitter. Importantly, the efficiency roll-off at high current densities due to triplet-triplet exciton annihilation in the device containing 20 wt% of the complex was lower than what is typically observed in lanthanide complex-based electroluminescent devices. This is presumably due to the high triplet energy of the host material, which prevents guest-to-host energy-back transfer and thus host-guest triplet-triplet exciton annihilation.
UR - http://www.scopus.com/inward/record.url?scp=85011891258&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85011891258&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2017.01.044
DO - 10.1016/j.orgel.2017.01.044
M3 - Article
AN - SCOPUS:85011891258
SN - 1566-1199
VL - 44
SP - 50
EP - 58
JO - Organic Electronics
JF - Organic Electronics
ER -