TY - JOUR
T1 - Near-edge X-ray absorption fine-Structure, X-ray photoemission, and Fourier transform infrared spectroscopies of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
AU - Yoshitake, Tsuyoshi
AU - Nagano, Akira
AU - Ohmagari, Shinya
AU - Itakura, Masaru
AU - Kuwano, Noriyuki
AU - Ohtani, Ryota
AU - Setoyama, Hiroyuki
AU - Kobayashi, Eiichi
AU - Nagayama, Kunihito
PY - 2009/2
Y1 - 2009/2
N2 - The chemical bonding structure of ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films prepared by pulsed laser deposition was examined by near-edge X-ray absorption fine-structure (NEXAFS), X-ray photoemission, and Fourier transform infrared (FTIR) spectroscopies. An intense sp3-CH peak was observed in the FTIR spectrum. This implies that the sp3-CH peak originates from the grain boundaries between UNCD crystallites, wherein dangling bonds are terminated with hydrogen atoms. The presence of an intense σ*C-C peak in the NEXAFS spectrum and a narrow sp3 peak in the photoemission spectrum was specific to UNCD/a-C:H films; these confirm the existence of UNCD crystallites.
AB - The chemical bonding structure of ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films prepared by pulsed laser deposition was examined by near-edge X-ray absorption fine-structure (NEXAFS), X-ray photoemission, and Fourier transform infrared (FTIR) spectroscopies. An intense sp3-CH peak was observed in the FTIR spectrum. This implies that the sp3-CH peak originates from the grain boundaries between UNCD crystallites, wherein dangling bonds are terminated with hydrogen atoms. The presence of an intense σ*C-C peak in the NEXAFS spectrum and a narrow sp3 peak in the photoemission spectrum was specific to UNCD/a-C:H films; these confirm the existence of UNCD crystallites.
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U2 - 10.1143/JJAP.48.020222
DO - 10.1143/JJAP.48.020222
M3 - Article
AN - SCOPUS:60849107743
SN - 0021-4922
VL - 48
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 2
M1 - 020222
ER -