TY - JOUR
T1 - Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPE
AU - Mori, Kazuo
AU - Hatakeyama, Hiroshi
AU - Hamamoto, Kiichi
AU - Komatsu, Keiro
AU - Sasaki, Tatsuya
AU - Matsumoto, Takashi
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1998/12/15
Y1 - 1998/12/15
N2 - We report the first atmospheric-pressure narrow-stripe (<2 μm) selective MOVPE. The extremely large bandgap wavelength shift of 370 nm for a selectively grown InGaAsP/InGaAsP multiple quantum well (MQW) was obtained with a small mask width variation (0-30 μm). This shift was four times that obtained under growth at 75 Torr. High-quality MQWs with flat interfaces and a photoluminescence full-width-at-half-maximum of less than 40 meV (0.5 kW/cm2) were obtained by optimizing growth conditions. We deduced that the essential flattening mechanism under these conditions is the formation of a (1 0 0) facet under step-flow growth mode. We fabricated 1.55 μm MQW Fabry-Perot laser diodes with a room temperature threshold current as low as 5 mA.
AB - We report the first atmospheric-pressure narrow-stripe (<2 μm) selective MOVPE. The extremely large bandgap wavelength shift of 370 nm for a selectively grown InGaAsP/InGaAsP multiple quantum well (MQW) was obtained with a small mask width variation (0-30 μm). This shift was four times that obtained under growth at 75 Torr. High-quality MQWs with flat interfaces and a photoluminescence full-width-at-half-maximum of less than 40 meV (0.5 kW/cm2) were obtained by optimizing growth conditions. We deduced that the essential flattening mechanism under these conditions is the formation of a (1 0 0) facet under step-flow growth mode. We fabricated 1.55 μm MQW Fabry-Perot laser diodes with a room temperature threshold current as low as 5 mA.
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U2 - 10.1016/S0022-0248(98)00635-6
DO - 10.1016/S0022-0248(98)00635-6
M3 - Article
AN - SCOPUS:0032477123
SN - 0022-0248
VL - 195
SP - 466
EP - 473
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -