Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence

Yoshifumi Ikoma, Yuta Nishino, Shouhei Anan, Toshiaki Abe, Hirofumi Sakita

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We investigated the formation of nanopores on top Si layers of silicon on insulatorsubstrates by CH3SiH3 pulse jet chemical vapor deposition. Nanopores were obtained by chemicaletching of the buried oxide layer below the pits which were introduced during the SiC growth. Thehigh nanopore density was obtained when the SiC growth temperature was set at 925 °C. Thenanopore density gradually decreased with increasing the temperature at higher SiC growthtemperature. The pore size increased with increasing the SiC growth temperature. These resultssuggest that pore density and size strongly depend on the SiC growth temperature.

    Original languageEnglish
    Title of host publicationAdvanced Materials Science and Technology
    PublisherTrans Tech Publications Ltd
    Pages252-255
    Number of pages4
    ISBN (Print)9783037856604
    DOIs
    Publication statusPublished - 2013
    Event8th International Forum on Advanced Materials Science and Technology, IFAMST 2012 - Fukuoka City, Japan
    Duration: Aug 1 2012Aug 4 2012

    Publication series

    NameMaterials Science Forum
    Volume750
    ISSN (Print)0255-5476
    ISSN (Electronic)1662-9752

    Other

    Other8th International Forum on Advanced Materials Science and Technology, IFAMST 2012
    Country/TerritoryJapan
    CityFukuoka City
    Period8/1/128/4/12

    All Science Journal Classification (ASJC) codes

    • General Materials Science
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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