Nano-artifact metrics based on random collapse of resist

Tsutomu Matsumoto, Morihisa Hoga, Yasuyuki Ohyagi, Mikio Ishikawa, Makoto Naruse, Kenta Hanaki, Ryosuke Suzuki, Daiki Sekiguchi, Naoya Tate, Motoichi Ohtsu

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10â nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications.

Original languageEnglish
Article number6142
JournalScientific reports
Publication statusPublished - Aug 21 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General


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