N-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes prepared at room temperature

Mahmoud Shaban; Kenji Kawai; Nathaporn Promros; Tsuyoshi Yoshitake

doi:10.1109/LED.2010.2078793

N-type nanocrystalline-FeSi₂/p-type si heterojunction photodiodes prepared at room temperature

Mahmoud Shaban
, Kenji Kawai
, Nathaporn Promros
, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

n-Type nanocrystalline-FeSi₂/p-type Si heterojunctions were prepared at room temperature by means of a facing target direct-current sputtering method. The current densityvoltage (JV) characteristics of the devices fabricated were investigated in the temperature range of 77300 K. At a wavelength of 1.31 μm, the photodiodes exhibited a room-temperature responsivity of 110 mA/cm² and a detectivity of 2.7×10 ⁸cmHz/W which was improved to 1.5×10¹⁰cmHz/W at 77 K. The results profile an attractive low-cost near-infrared photodiode suitable for large-area optoelectronics.

Original language	English
Article number	5610704
Pages (from-to)	1428-1430
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	12
DOIs	https://doi.org/10.1109/LED.2010.2078793
Publication status	Published - Dec 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2078793

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title = "N-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes prepared at room temperature",

abstract = "n-Type nanocrystalline-FeSi2/p-type Si heterojunctions were prepared at room temperature by means of a facing target direct-current sputtering method. The current densityvoltage (JV) characteristics of the devices fabricated were investigated in the temperature range of 77300 K. At a wavelength of 1.31 μm, the photodiodes exhibited a room-temperature responsivity of 110 mA/cm2 and a detectivity of 2.7×10 8cmHz/W which was improved to 1.5×1010cmHz/W at 77 K. The results profile an attractive low-cost near-infrared photodiode suitable for large-area optoelectronics.",

author = "Mahmoud Shaban and Kenji Kawai and Nathaporn Promros and Tsuyoshi Yoshitake",

year = "2010",

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doi = "10.1109/LED.2010.2078793",

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volume = "31",

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T1 - N-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes prepared at room temperature

AU - Shaban, Mahmoud

AU - Kawai, Kenji

AU - Promros, Nathaporn

AU - Yoshitake, Tsuyoshi

PY - 2010/12

Y1 - 2010/12

N2 - n-Type nanocrystalline-FeSi2/p-type Si heterojunctions were prepared at room temperature by means of a facing target direct-current sputtering method. The current densityvoltage (JV) characteristics of the devices fabricated were investigated in the temperature range of 77300 K. At a wavelength of 1.31 μm, the photodiodes exhibited a room-temperature responsivity of 110 mA/cm2 and a detectivity of 2.7×10 8cmHz/W which was improved to 1.5×1010cmHz/W at 77 K. The results profile an attractive low-cost near-infrared photodiode suitable for large-area optoelectronics.

AB - n-Type nanocrystalline-FeSi2/p-type Si heterojunctions were prepared at room temperature by means of a facing target direct-current sputtering method. The current densityvoltage (JV) characteristics of the devices fabricated were investigated in the temperature range of 77300 K. At a wavelength of 1.31 μm, the photodiodes exhibited a room-temperature responsivity of 110 mA/cm2 and a detectivity of 2.7×10 8cmHz/W which was improved to 1.5×1010cmHz/W at 77 K. The results profile an attractive low-cost near-infrared photodiode suitable for large-area optoelectronics.

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M3 - Article

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

N-type nanocrystalline-FeSi₂/p-type si heterojunction photodiodes prepared at room temperature

Abstract

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