N -channel field-effect transistors with an organic-inorganic layered perovskite semiconductor

Toshinori Matsushima, Fabrice Dominique Mathevet, Benoît Heinrich, Shinobu Terakawa, Takashi Fujihara, Chuanjiang Qin, Atula S.D. Sandanayaka, Jean Charles Maurice Ribierre, Chihaya Adachi

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)


Large electron injection barriers and electrode degradation are serious issues that need to be overcome to obtain n-channel operation in field-effect transistors with an organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 semiconductor. By employing low-work-function Al source/drain electrodes and by inserting C60 layers between the perovskite semiconductor and the Al electrodes to reduce the injection barrier and to suppress the electrode degradation, we demonstrate n-channel perovskite transistors with electron mobilities of up to 2.1 cm2/V s, the highest value ever reported in spin-coated perovskite transistors. The n-channel transport properties of these transistors are relatively stable in vacuum but are very sensitive to oxygen, which works as electron traps in perovskite and C60 layers. In addition, grazing-incidence X-ray scattering and thermally stimulated current measurements revealed that crystallite size and electron traps largely affect the n-channel transport properties.

Original languageEnglish
Article number253301
JournalApplied Physics Letters
Issue number25
Publication statusPublished - Dec 19 2016

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'N -channel field-effect transistors with an organic-inorganic layered perovskite semiconductor'. Together they form a unique fingerprint.

Cite this