TY - JOUR
T1 - N -channel field-effect transistors with an organic-inorganic layered perovskite semiconductor
AU - Matsushima, Toshinori
AU - Mathevet, Fabrice Dominique
AU - Heinrich, Benoît
AU - Terakawa, Shinobu
AU - Fujihara, Takashi
AU - Qin, Chuanjiang
AU - Sandanayaka, Atula S.D.
AU - Ribierre, Jean Charles Maurice
AU - Adachi, Chihaya
N1 - Funding Information:
This work was supported by JSPS KAKENHI, Grant Nos. 15K14149 and 16H04192. We thank the Pohang Accelerator Laboratory (PAL) for giving us the opportunity to perform the GIXS measurements, MEST and POSTECH for supporting these experiments, Dr Hyungju Ahn for adjustments and help, and other colleagues from the 9A USAXS beamline for assistance. This research was supported by the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2010-00453). The authors also acknowledge the International Research Network (GDRI, CNRS) on Functional Materials for Organic Optics, Electronics and Devices (FUNMOOD).
Publisher Copyright:
© 2016 Author(s).
PY - 2016/12/19
Y1 - 2016/12/19
N2 - Large electron injection barriers and electrode degradation are serious issues that need to be overcome to obtain n-channel operation in field-effect transistors with an organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 semiconductor. By employing low-work-function Al source/drain electrodes and by inserting C60 layers between the perovskite semiconductor and the Al electrodes to reduce the injection barrier and to suppress the electrode degradation, we demonstrate n-channel perovskite transistors with electron mobilities of up to 2.1 cm2/V s, the highest value ever reported in spin-coated perovskite transistors. The n-channel transport properties of these transistors are relatively stable in vacuum but are very sensitive to oxygen, which works as electron traps in perovskite and C60 layers. In addition, grazing-incidence X-ray scattering and thermally stimulated current measurements revealed that crystallite size and electron traps largely affect the n-channel transport properties.
AB - Large electron injection barriers and electrode degradation are serious issues that need to be overcome to obtain n-channel operation in field-effect transistors with an organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 semiconductor. By employing low-work-function Al source/drain electrodes and by inserting C60 layers between the perovskite semiconductor and the Al electrodes to reduce the injection barrier and to suppress the electrode degradation, we demonstrate n-channel perovskite transistors with electron mobilities of up to 2.1 cm2/V s, the highest value ever reported in spin-coated perovskite transistors. The n-channel transport properties of these transistors are relatively stable in vacuum but are very sensitive to oxygen, which works as electron traps in perovskite and C60 layers. In addition, grazing-incidence X-ray scattering and thermally stimulated current measurements revealed that crystallite size and electron traps largely affect the n-channel transport properties.
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U2 - 10.1063/1.4972404
DO - 10.1063/1.4972404
M3 - Article
AN - SCOPUS:85006929858
SN - 0003-6951
VL - 109
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 25
M1 - 253301
ER -