N-Buffer Design for Silicon-Based Power Diode Targeting High Dynamic Robustness and High Operating Temperature over 448 K

Katsumi Nakamura, Shin Ichi Nishizawa, Akihiko Furukawa

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    In this article, we investigated the destructive behavior of the latest power diode when operating a hard-switching process. From the numerical simulation analysis, the destruction behavior originates in the enhanced impact ionization at the p-n junction on the anode side and current filament in the active region. A relaxing electric field on the anode side and a moderated electric field on the cathode side prevent the above-mentioned behavior. These improvements result from controlling the carrier-plasma layer in the n-buffer layer on the cathode side. This article demonstrates the effective n-buffer technology for the power diode that achieves superior dynamic robustness and high operating temperature over 448 K.

    Original languageEnglish
    Article number9098162
    Pages (from-to)2437-2444
    Number of pages8
    JournalIEEE Transactions on Electron Devices
    Volume67
    Issue number6
    DOIs
    Publication statusPublished - Jun 2020

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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