MR ratio enhancement by NOL current-confined-path structures in CPP spin valves

Hideaki Fukuzawa; Hiromi Yuasa; Susumu Hashimoto; Katsuhiko Koi; Hitoshi Iwasaki; Masayuki Takagishi; Yoichiro Tanaka; Masashi Sahashi

doi:10.1109/TMAG.2004.829185

MR ratio enhancement by NOL current-confined-path structures in CPP spin valves

Hideaki Fukuzawa, Hiromi Yuasa, Susumu Hashimoto, Katsuhiko Koi, Hitoshi Iwasaki, Masayuki Takagishi, Yoichiro Tanaka, Masashi Sahashi

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

We have compared the magnetoresistance (MR) performance of current-confined-path (CCP) current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin valve films with a nano-oxide-layer (NOL), made between natural oxidation (NO) and ion-assisted oxidation (IAO). For the NO, an MR ratio was only 1.5% at an RA of 370 mωμm², whereas for the IAO, an MR ratio was greatly increased to 5.4% at an RA of 500 mωμm². Fitted data by the Valet-Fert model showing larger MR enhancement effect by the IAO is explained by the improvement of the metal-purity of the Cu inside the CCP structure. By further improvement of metal-purity of the Cu, a large MR ratio of more than 30% can be expected at a small RA of 300 mωμm². The CCP-CPP spin valve film is a promising candidate for realizing high-density recording heads for 200 to 400-Gbpsi recording.

Original language	English
Pages (from-to)	2236-2238
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	40
Issue number	4 II
DOIs	https://doi.org/10.1109/TMAG.2004.829185
Publication status	Published - Jul 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2004.829185

Cite this

@article{ce6006be95c1424cba9887765150d3f1,

title = "MR ratio enhancement by NOL current-confined-path structures in CPP spin valves",

abstract = "We have compared the magnetoresistance (MR) performance of current-confined-path (CCP) current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin valve films with a nano-oxide-layer (NOL), made between natural oxidation (NO) and ion-assisted oxidation (IAO). For the NO, an MR ratio was only 1.5% at an RA of 370 mωμm2, whereas for the IAO, an MR ratio was greatly increased to 5.4% at an RA of 500 mωμm2. Fitted data by the Valet-Fert model showing larger MR enhancement effect by the IAO is explained by the improvement of the metal-purity of the Cu inside the CCP structure. By further improvement of metal-purity of the Cu, a large MR ratio of more than 30% can be expected at a small RA of 300 mωμm2. The CCP-CPP spin valve film is a promising candidate for realizing high-density recording heads for 200 to 400-Gbpsi recording.",

author = "Hideaki Fukuzawa and Hiromi Yuasa and Susumu Hashimoto and Katsuhiko Koi and Hitoshi Iwasaki and Masayuki Takagishi and Yoichiro Tanaka and Masashi Sahashi",

year = "2004",

month = jul,

doi = "10.1109/TMAG.2004.829185",

language = "English",

volume = "40",

pages = "2236--2238",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4 II",

}

TY - JOUR

T1 - MR ratio enhancement by NOL current-confined-path structures in CPP spin valves

AU - Fukuzawa, Hideaki

AU - Yuasa, Hiromi

AU - Hashimoto, Susumu

AU - Koi, Katsuhiko

AU - Iwasaki, Hitoshi

AU - Takagishi, Masayuki

AU - Tanaka, Yoichiro

AU - Sahashi, Masashi

PY - 2004/7

Y1 - 2004/7

N2 - We have compared the magnetoresistance (MR) performance of current-confined-path (CCP) current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin valve films with a nano-oxide-layer (NOL), made between natural oxidation (NO) and ion-assisted oxidation (IAO). For the NO, an MR ratio was only 1.5% at an RA of 370 mωμm2, whereas for the IAO, an MR ratio was greatly increased to 5.4% at an RA of 500 mωμm2. Fitted data by the Valet-Fert model showing larger MR enhancement effect by the IAO is explained by the improvement of the metal-purity of the Cu inside the CCP structure. By further improvement of metal-purity of the Cu, a large MR ratio of more than 30% can be expected at a small RA of 300 mωμm2. The CCP-CPP spin valve film is a promising candidate for realizing high-density recording heads for 200 to 400-Gbpsi recording.

AB - We have compared the magnetoresistance (MR) performance of current-confined-path (CCP) current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin valve films with a nano-oxide-layer (NOL), made between natural oxidation (NO) and ion-assisted oxidation (IAO). For the NO, an MR ratio was only 1.5% at an RA of 370 mωμm2, whereas for the IAO, an MR ratio was greatly increased to 5.4% at an RA of 500 mωμm2. Fitted data by the Valet-Fert model showing larger MR enhancement effect by the IAO is explained by the improvement of the metal-purity of the Cu inside the CCP structure. By further improvement of metal-purity of the Cu, a large MR ratio of more than 30% can be expected at a small RA of 300 mωμm2. The CCP-CPP spin valve film is a promising candidate for realizing high-density recording heads for 200 to 400-Gbpsi recording.

UR - http://www.scopus.com/inward/record.url?scp=4444253739&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4444253739&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2004.829185

DO - 10.1109/TMAG.2004.829185

M3 - Article

AN - SCOPUS:4444253739

SN - 0018-9464

VL - 40

SP - 2236

EP - 2238

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 4 II

ER -

MR ratio enhancement by NOL current-confined-path structures in CPP spin valves

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this