Monolithically integrated long-wavelength high-speed waveguide p-i-n HEMT receiver

Y. Akahori, Y. Muramoto, K. Kato, M. Ikeda, A. Kozen, Y. Itaya

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


The paper presents an evaluation of a high speed side-illuminated receiver OEIC. This receiver consists of a waveguide p-i-n photodiode (WGPD) and an In AlAs/InGaAs HEMT transimpedance amplifier. The monolithic integration was accomplished by C2H6/O2 RIE, together with passivation on the HEMT structure. The photoreceiver had a 3-dB bandwidth of 8.3 GHz and a transimpedance of 100 Ω. This technology will lead to a high performance photonic circuits integrated with high-speed electronic circuits to control and process light signals.

Original languageEnglish
Pages (from-to)49-50
Number of pages2
JournalLEOS Summer Topical Meeting
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the LEOS 1994 Summer Topical Meeting - Lake Tahoe, NV, USA
Duration: Jul 6 1994Jul 8 1994

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Monolithically integrated long-wavelength high-speed waveguide p-i-n HEMT receiver'. Together they form a unique fingerprint.

Cite this