Abstract
The paper presents an evaluation of a high speed side-illuminated receiver OEIC. This receiver consists of a waveguide p-i-n photodiode (WGPD) and an In AlAs/InGaAs HEMT transimpedance amplifier. The monolithic integration was accomplished by C2H6/O2 RIE, together with passivation on the HEMT structure. The photoreceiver had a 3-dB bandwidth of 8.3 GHz and a transimpedance of 100 Ω. This technology will lead to a high performance photonic circuits integrated with high-speed electronic circuits to control and process light signals.
Original language | English |
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Pages (from-to) | 49-50 |
Number of pages | 2 |
Journal | LEOS Summer Topical Meeting |
Publication status | Published - 1994 |
Externally published | Yes |
Event | Proceedings of the LEOS 1994 Summer Topical Meeting - Lake Tahoe, NV, USA Duration: Jul 6 1994 → Jul 8 1994 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering