TY - GEN
T1 - Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer
AU - Kochhar, Abhay
AU - Matsumura, Takeshi
AU - Zhang, Guoqiang
AU - Pokharel, Ramesh
AU - Hashimoto, Ken Ya
AU - Esashi, Masayoshi
AU - Tanaka, Shuji
PY - 2012/12/1
Y1 - 2012/12/1
N2 - An integration process for the fabrication of thin film bulk acoustic wave resonator (FBAR) above the CMOS IC is proposed. An adhesive-bonding-based film transfer technique is utilized to transfer high resistivity Si film onto a CMOS chip. Benzocyclobutene (BCB) is used as an adhesive film. It is a heat resistive polymer and processes of temperature up to 300°C are allowed on it. The CMOS is protected by BCB and thus is not damaged by plasma and chemical treatments. The transferred Si film offers flat and stable surface which is utilized for the deposition of ruthenium, aluminum nitride & aluminum to fabricate the FBAR structure. Finally, Si underneath the active device area is sacrificially etched to fabricate the air gap type FBAR. In this paper, we present the fabrication process and discuss important issues related to the fabrication.
AB - An integration process for the fabrication of thin film bulk acoustic wave resonator (FBAR) above the CMOS IC is proposed. An adhesive-bonding-based film transfer technique is utilized to transfer high resistivity Si film onto a CMOS chip. Benzocyclobutene (BCB) is used as an adhesive film. It is a heat resistive polymer and processes of temperature up to 300°C are allowed on it. The CMOS is protected by BCB and thus is not damaged by plasma and chemical treatments. The transferred Si film offers flat and stable surface which is utilized for the deposition of ruthenium, aluminum nitride & aluminum to fabricate the FBAR structure. Finally, Si underneath the active device area is sacrificially etched to fabricate the air gap type FBAR. In this paper, we present the fabrication process and discuss important issues related to the fabrication.
UR - http://www.scopus.com/inward/record.url?scp=84882414428&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84882414428&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2012.0262
DO - 10.1109/ULTSYM.2012.0262
M3 - Conference contribution
AN - SCOPUS:84882414428
SN - 9781467345613
T3 - IEEE International Ultrasonics Symposium, IUS
SP - 1047
EP - 1050
BT - 2012 IEEE International Ultrasonics Symposium, IUS 2012
T2 - 2012 IEEE International Ultrasonics Symposium, IUS 2012
Y2 - 7 October 2012 through 10 October 2012
ER -