TY - JOUR
T1 - Molecular dynamics simulation of graphene growth by surface decomposition of 6H-SiC(0001) and (0001̄)
AU - Iguchi, Ryosuke
AU - Kawamura, Takahiro
AU - Suzuki, Yasuyuki
AU - Inoue, Masato
AU - Kangawa, Yoshihiro
AU - Kakimoto, Koichi
PY - 2014/6
Y1 - 2014/6
N2 - Much attention has been paid to graphene growth by the surface decomposition of SiC. A SiC substrate surface contains a Si-terminated (0001) face and a C-terminated (0001̄) face. It was reported that graphene layers on these two faces have different structures and electronic properties. We studied the effects of the SiC substrate surface, i.e., of the Si-face and C-face, and annealing temperature on graphene growth using classical molecular dynamics (MD) simulation. It was found that quality of graphene on the Si-face was better than that on the C-face. In addition, graphene coverage was high at a high annealing temperature.
AB - Much attention has been paid to graphene growth by the surface decomposition of SiC. A SiC substrate surface contains a Si-terminated (0001) face and a C-terminated (0001̄) face. It was reported that graphene layers on these two faces have different structures and electronic properties. We studied the effects of the SiC substrate surface, i.e., of the Si-face and C-face, and annealing temperature on graphene growth using classical molecular dynamics (MD) simulation. It was found that quality of graphene on the Si-face was better than that on the C-face. In addition, graphene coverage was high at a high annealing temperature.
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U2 - 10.7567/JJAP.53.065601
DO - 10.7567/JJAP.53.065601
M3 - Article
AN - SCOPUS:84903145033
SN - 0021-4922
VL - 53
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 6
M1 - 065601
ER -