TY - JOUR
T1 - Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth
AU - Kawamura, Takahiro
AU - Kangawa, Yoshihiro
AU - Kakimoto, Koichi
AU - Suzuki, Yasuyuki
N1 - Funding Information:
This work was supported in part by the Collaborative Research Program of Research Institute for Applied Mechanics, Kyushu University .
PY - 2012/7/15
Y1 - 2012/7/15
N2 - In this study, we simulated the solution growth of gallium nitride (GaN) and investigated the diffusion behavior of nitrogen (N) atoms on growth surfaces by molecular dynamics simulation. The simulation showed that the Ga-face grew flatter than the N-face. Comparing the diffusion coefficients of a N atom on Ga- and N-faces, the values on the Ga-face were about 3.5 times larger than those on the N-face.
AB - In this study, we simulated the solution growth of gallium nitride (GaN) and investigated the diffusion behavior of nitrogen (N) atoms on growth surfaces by molecular dynamics simulation. The simulation showed that the Ga-face grew flatter than the N-face. Comparing the diffusion coefficients of a N atom on Ga- and N-faces, the values on the Ga-face were about 3.5 times larger than those on the N-face.
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U2 - 10.1016/j.jcrysgro.2012.04.022
DO - 10.1016/j.jcrysgro.2012.04.022
M3 - Article
AN - SCOPUS:84860616781
SN - 0022-0248
VL - 351
SP - 32
EP - 36
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -