Molecular beam epitaxy growth of superconducting Sr1-xK xFe2As2 and Ba1-xK xFe2As2

Soichiro Takeda; Shinya Ueda; Takeshi Yamagishi; Shinya Agatsuma; Shiro Takano; Akihiro Mitsuda; Michio Naito

doi:10.1143/APEX.3.093101

Molecular beam epitaxy growth of superconducting Sr_1-xK _xFe₂As₂ and Ba_1-xK _xFe₂As₂

Soichiro Takeda, Shinya Ueda, Takeshi Yamagishi, Shinya Agatsuma, Shiro Takano, Akihiro Mitsuda, Michio Naito

Condensed Matter Physics

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

We report on the molecular beam epitaxy growth of nonsuperconducting SrFe₂As₂ and BaFe₂As₂ and superconducting Sr_1-xK_xFe₂As₂ and Ba_1-xK_xFe₂As₂ thin films. SrFe ₂As₂ and BaFe₂As₂ films were obtained rather easily at the growth temperatures of 540-600 °C, which are not much different from those for GaAs growth. However, superconducting Sr _1-xK_xFe₂As₂ and Ba _1-xK_xFe₂As₂ films cannot be obtained at the same growth temperatures as elemental K is highly volatile. The key to incorporating K into films is low-temperature growth (≤350 °C) in reduced As flux. The resultant films showed good superconducting properties: T ^on_c(Tend^end_c) = 33.2 K (30.0 K) and 38.3 K (35.5 K) for Sr_1-xKxFe₂As₂ and Ba _1-xK_xFe₂As₂ thin films respectively.

Original language	English
Article number	093101
Journal	Applied Physics Express
Volume	3
Issue number	9
DOIs	https://doi.org/10.1143/APEX.3.093101
Publication status	Published - Sept 2010

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Molecular beam epitaxy growth of superconducting Sr1-xK xFe2As2 and Ba1-xK xFe2As2",

abstract = "We report on the molecular beam epitaxy growth of nonsuperconducting SrFe2As2 and BaFe2As2 and superconducting Sr1-xKxFe2As2 and Ba1-xKxFe2As2 thin films. SrFe 2As2 and BaFe2As2 films were obtained rather easily at the growth temperatures of 540-600 °C, which are not much different from those for GaAs growth. However, superconducting Sr 1-xKxFe2As2 and Ba 1-xKxFe2As2 films cannot be obtained at the same growth temperatures as elemental K is highly volatile. The key to incorporating K into films is low-temperature growth (≤350 °C) in reduced As flux. The resultant films showed good superconducting properties: T onc(Tendendc) = 33.2 K (30.0 K) and 38.3 K (35.5 K) for Sr1-xKxFe2As2 and Ba 1-xKxFe2As2 thin films respectively.",

author = "Soichiro Takeda and Shinya Ueda and Takeshi Yamagishi and Shinya Agatsuma and Shiro Takano and Akihiro Mitsuda and Michio Naito",

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AU - Takeda, Soichiro

AU - Ueda, Shinya

AU - Yamagishi, Takeshi

AU - Agatsuma, Shinya

AU - Takano, Shiro

AU - Mitsuda, Akihiro

AU - Naito, Michio

PY - 2010/9

Y1 - 2010/9

N2 - We report on the molecular beam epitaxy growth of nonsuperconducting SrFe2As2 and BaFe2As2 and superconducting Sr1-xKxFe2As2 and Ba1-xKxFe2As2 thin films. SrFe 2As2 and BaFe2As2 films were obtained rather easily at the growth temperatures of 540-600 °C, which are not much different from those for GaAs growth. However, superconducting Sr 1-xKxFe2As2 and Ba 1-xKxFe2As2 films cannot be obtained at the same growth temperatures as elemental K is highly volatile. The key to incorporating K into films is low-temperature growth (≤350 °C) in reduced As flux. The resultant films showed good superconducting properties: T onc(Tendendc) = 33.2 K (30.0 K) and 38.3 K (35.5 K) for Sr1-xKxFe2As2 and Ba 1-xKxFe2As2 thin films respectively.

AB - We report on the molecular beam epitaxy growth of nonsuperconducting SrFe2As2 and BaFe2As2 and superconducting Sr1-xKxFe2As2 and Ba1-xKxFe2As2 thin films. SrFe 2As2 and BaFe2As2 films were obtained rather easily at the growth temperatures of 540-600 °C, which are not much different from those for GaAs growth. However, superconducting Sr 1-xKxFe2As2 and Ba 1-xKxFe2As2 films cannot be obtained at the same growth temperatures as elemental K is highly volatile. The key to incorporating K into films is low-temperature growth (≤350 °C) in reduced As flux. The resultant films showed good superconducting properties: T onc(Tendendc) = 33.2 K (30.0 K) and 38.3 K (35.5 K) for Sr1-xKxFe2As2 and Ba 1-xKxFe2As2 thin films respectively.

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Molecular beam epitaxy growth of superconducting Sr_1-xK _xFe₂As₂ and Ba_1-xK _xFe₂As₂

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