TY - JOUR
T1 - Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices
AU - Miyao, M.
AU - Hamaya, K.
AU - Sadoh, T.
AU - Itoh, H.
AU - Maeda, Y.
N1 - Funding Information:
The authors wish to thank Drs. Y. Nozaki, K. Ueda, Y. Ando, M. Kumano, and K. Yamamoto for their helpful discussions. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Area (No. 18063018 ) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan .
PY - 2010/1/1
Y1 - 2010/1/1
N2 - Our recent progress in low-temperature molecular beam epitaxy of ferromagnetic Heusler alloys on group-IV-semiconductor is reviewed. By optimizing beam flux ratio (Fe:Si = 3:1) and growth temperature (130 °C), a high-quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.9 Oe) and electrical properties with Schottky barrier height of 0.52 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was on the order of 104. In addition, heteroepitaxy of half-metallic alloys (Fe3 - XMnxSi(X = 0.6-1.4)) on Ge substrates was demonstrated. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and ferromagnetic source/drain for spin-injection.
AB - Our recent progress in low-temperature molecular beam epitaxy of ferromagnetic Heusler alloys on group-IV-semiconductor is reviewed. By optimizing beam flux ratio (Fe:Si = 3:1) and growth temperature (130 °C), a high-quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.9 Oe) and electrical properties with Schottky barrier height of 0.52 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was on the order of 104. In addition, heteroepitaxy of half-metallic alloys (Fe3 - XMnxSi(X = 0.6-1.4)) on Ge substrates was demonstrated. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and ferromagnetic source/drain for spin-injection.
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U2 - 10.1016/j.tsf.2009.10.106
DO - 10.1016/j.tsf.2009.10.106
M3 - Article
AN - SCOPUS:73649099488
SN - 0040-6090
VL - 518
SP - S273-S277
JO - Thin Solid Films
JF - Thin Solid Films
IS - 6 SUPPL. 1
ER -