Modulating the morphology and electrical properties of GaAs nanowires via catalyst stabilization by oxygen

Ning Han, Zaixing Yang, Fengyun Wang, Senpo Yip, Guofa Dong, Xiaoguang Liang, Takfu Hung, Yunfa Chen, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Nowadays, III-V compound semiconductor nanowires (NWs) have attracted extensive research interest because of their high carrier mobility favorable for next-generation electronics. However, it is still a great challenge for the large-scale synthesis of III-V NWs with well-controlled and uniform morphology as well as reliable electrical properties, especially on the low-cost noncrystalline substrates for practical utilization. In this study, high-density GaAs NWs with lengths >10 μm and uniform diameter distribution (relative standard deviation σ ∼ 20%) have been successfully prepared by annealing the Au catalyst films (4-12 nm) in air right before GaAs NW growth, which is in distinct contrast to the ones of 2-3 μm length and widely distributed of σ ∼ 20-60% of the conventional NWs grown by the H2-annealed film. This air-annealing process is found to stabilize the Au nanoparticle seeds and to minimize Ostwald ripening during NW growth. Importantly, the obtained GaAs NWs exhibit uniform p-type conductivity when fabricated into NW-arrayed thin-film field-effect transistors (FETs). Moreover, they can be integrated with an n-type InP NW FET into effective complementary metal oxide semiconductor inverters, capable of working at low voltages of 0.5-1.5 V. All of these results explicitly demonstrate the promise of these NW morphology and electrical property controls through the catalyst engineering for next-generation electronics.

Original languageEnglish
Pages (from-to)5591-5597
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number9
Publication statusPublished - Mar 11 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Materials Science


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